Sublattice Reversal in GaAs/Si/GaAs (100) Heterostructures by Molecular Beam Epitaxy.

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  • Koh Shinji
    Department of Applied Physics, Faculty of Engineering, The University of Tokyo, 7–3–1 Hongo, Bunkyo–ku, Tokyo 113–8656, Japan
  • Kondo Takashi
    Department of Materials Science, Faculty of Engineering, The University of Tokyo, 7–3–1 Hongo, Bunkyo–ku, Tokyo 113–8656, Japan
  • Ishiwada Tetsuya
    Department of Materials Science, Faculty of Engineering, The University of Tokyo, 7–3–1 Hongo, Bunkyo–ku, Tokyo 113–8656, Japan
  • Iwamoto Chihiro
    Engineering Research Institute, Faculty of Engineering, The University of Tokyo, 2–11–16 Yayoi, Bunkyo–ku, Tokyo 113–8656, Japan
  • Ichinose Hideki
    Department of Materials Science, Faculty of Engineering, The University of Tokyo, 7–3–1 Hongo, Bunkyo–ku, Tokyo 113–8656, Japan
  • Yaguchi Hiroyuki
    Department of Applied Physics, Faculty of Engineering, The University of Tokyo, 7–3–1 Hongo, Bunkyo–ku, Tokyo 113–8656, Japan
  • Usami Takanori
    Research Center for Advanced Science and Technology, The University of Tokyo, 4–6–1 Komaba, Meguro–ku, Tokyo 153–8904, Japan
  • Shiraki Yasuhiro
    Research Center for Advanced Science and Technology, The University of Tokyo, 4–6–1 Komaba, Meguro–ku, Tokyo 153–8904, Japan
  • Ito Ryoichi
    Department of Applied Physics, Faculty of Engineering, The University of Tokyo, 7–3–1 Hongo, Bunkyo–ku, Tokyo 113–8656, Japan

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タイトル別名
  • Sublattice Reversal in GaAs Si GaAs 100

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抄録

Sublattice reversal in III-V compound semiconductors grown on group-IV epitaxial layers on III-V substrates has been proposed for fabricating nonlinear optical devices with domain-inverted compound semiconductor structures. Sublattice reversal epitaxy is demonstrated in the GaAs/Si/GaAs (100) system and confirmed by reflection high energy electron diffraction, cross-sectional transmission electron microscopy, anisotropic etching, and optical second-harmonic generation measurements. The present sublattice reversal seems to be assisted by self annihilation of antiphase domains generated at GaAs/Si interfaces.

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