Formation of Carbon-Related Defects During the Carbon-Enhanced Annihilation of Thermal Donors in Silicon.

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  • Kamiura Yoichi
    Faculty of Engineering, Okayama University, 3–1–1 Tsushima–naka, Okayama 700, Japan
  • Maeda Takashi
    Faculty of Engineering, Okayama University, 3–1–1 Tsushima–naka, Okayama 700, Japan
  • Yamashita Yoshifumi
    Faculty of Engineering, Okayama University, 3–1–1 Tsushima–naka, Okayama 700, Japan
  • Nakamura Minoru
    Hitachi Research Laboratory, Hitachi, Ltd., 7–1–1 Omika–cho, Hitachi, Ibaraki 319–12, Japan

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  • Formation of Carbon-Related Defects Dur

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We observed that a defect related to carbon and phosphorus was formed during the carbon-enhanced annihilation of thermal donors at 470°C in silicon. We determined, using deep-level transient spectroscopy (DLTS), that the defect has a deep level at E c-0.36 eV and its density has positive correlation with carbon and phosphorus densities. The formation rate of the defect is proportional to the phosphorus density. We also observed the 767 meV photoluminescence line (P-line) that had been identified as the complex with a core of interstitial carbon, vacancy and oxygen dimer. We tentatively ascribe the E c-0.36 eV defect to the pair of interstitial carbon and substitutional phosphorus.

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