Imaging p-n Junctions by Scanning Auger Microscopy.

• Ide Takashi

  Device Analysis and Evaluation Technology Center, NEC Corporation, 1753 Shimonumabe, Nakahara–ku, Kawasaki 211–8666, Japan

• Hiroshima Seiichi

  Device Analysis and Evaluation Technology Center, NEC Corporation, 1753 Shimonumabe, Nakahara–ku, Kawasaki 211–8666, Japan

• Shimizu Keiji

  Device Analysis and Evaluation Technology Center, NEC Corporation, 1753 Shimonumabe, Nakahara–ku, Kawasaki 211–8666, Japan

書誌事項

タイトル別名

• Imaging p-n Junctions by Scanning Auger

抄録

We present a new technique for imaging p-n junctions in semiconductors based on Auger electron spectroscopy. By measuring fine Auger electron spectra of the semiconductor material (e.g., silicon LVV Auger), the position of the Fermi level in the band gap of the semiconductor is estimated from the energy shift of the Auger spectra. The position of the Fermi level depends on the type of dopant. By applying a correlation calculation to measure the Auger energy shift, which is smaller than the band gap of the semiconductor, we can successfully image two-dimensional p-n junctions in LSI devices.

収録刊行物

• Japanese Journal of Applied Physics

  Japanese Journal of Applied Physics 37 (8B), L963-L965, 1998

  The Japan Society of Applied Physics

キーワード

• silicon
• Auger spectrum
• microscopy
• p-n junction
• LSI
• built-in potential

詳細情報

• CRID: 1390001206250445568
• NII論文ID: 210000044679
• NII論文ID: 110003927654
• NII書誌ID: AA10650595
• DOI: 10.1143/jjap.37.l963
• ISSN: 13474065
• ISSN: 00214922
• NDL書誌ID: 4550596
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I4550596
• Web Site: https://iopscience.iop.org/article/10.1143/JJAP.37.L963
• Web Site: https://iopscience.iop.org/article/10.1143/JJAP.37.L963/pdf
• 本文言語コード: en
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