Photo-Enbanced Activation of Hydrogen-Passivated Magnesium in P-Type GaN Films

• Kamiura Yoichi

  Faculty of Engineering, Okayama University, 3–1–1 Tsushima–naka, Okayama 700–8530, Japan

• Yamashita Yoshifumi

  Faculty of Engineering, Okayama University, 3–1–1 Tsushima–naka, Okayama 700–8530, Japan

• Nakamura Shuji

  Department of Research and Development, Nichia Chemical Industries, Ltd., 491 Oka, Kaminaka, Anan, Tokushima 774, Japan

書誌事項

タイトル別名

• Photo-Enhanced Activation of Hydrogen-Passivated Magnesium in P-Type GaN Films.
• Photo-Enbanced Activation of Hydrogen-P

抄録

We studied the effect of UV-light irradiation on annealing of as-grown Mg-doped GaN films by resistivity and Hall measurements. The annealing temperature where the resistivity reduction due to the electrical activation of hydrogen-passivated Mg occurred with the increase of hole density and the decrease of hole mobility, was reduced from 550 to 450^°C by the irradiation of UV light with a peak wavelength around 350 nm. This suggests that electronic excitation reduces the thermal stability of Mg-H complexes in GaN.

収録刊行物

• Japanese Journal of Applied Physics

  Japanese Journal of Applied Physics 37 (8B), L970-L971, 1998

  The Japan Society of Applied Physics

キーワード

• GaN
• hydrogen
• magnesium
• UV irradiation
• annealing
• electronic excitation
• electrical properties

詳細情報

• CRID: 1390001206250441856
• NII論文ID: 210000044682
• NII論文ID: 110003927656
• NII書誌ID: AA10650595
• DOI: 10.1143/jjap.37.l970
• ISSN: 13474065
• ISSN: 00214922
• NDL書誌ID: 4550598
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I4550598
• Web Site: https://iopscience.iop.org/article/10.1143/JJAP.37.L970
• Web Site: https://iopscience.iop.org/article/10.1143/JJAP.37.L970/pdf
• 本文言語コード: en
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