MoSe 2 layer formation at Cu(In,Ga)Se 2/Mo Interfaces in High Efficiency Cu(In1- xGa x)Se 2 Solar Cells

Nishiwaki Shiro, Kohara Naoki, Negami Takayuki, Wada Takahiro

doi:10.1143/jjap.37.l71

MoSe₂ layers formed at the interface between Cu-In-Ga-Se and Mo layers were studied by X-ray diffraction and high resolution transmission electron microscopy. Various composition Cu-In-Ga-Se films such as Se, Cu-Se, In-Ga-Se and Cu-rich Cu-In-Ga-Se were deposited on Mo coated glass substrates by physical vapor deposition. For the case of the Se/Mo interface, a MoSe₂ layer of about 100 Å thickness was observed. The c-axis of the MoSe₂ grains were found to be oriented normal to the surface of Mo layer. For the Cu-Se/Mo and Cu-rich Cu-In-Ga-Se/Mo structures, the thickness of the MoSe₂ layers found at the interface was thin. For the case of the In-Ga-Se/Mo structure, a 0.1 µm thick interfacial MoSe₂ layer was observed whose c-axis was oriented parallel to the Mo surface. The microstructure of the In-Ga-Se/Mo film was similar to that of the device quality CIGS/Mo structure deposited by the “3-stage” process. A formation mechanism for the MoSe₂ layers occurring during the “3-stage” process is proposed.

MoSe<sub> 2</sub> layer formation at Cu(In,Ga)Se<sub> 2</sub>/Mo Interfaces in High Efficiency Cu(In<sub>1- x</sub>Ga<sub> x</sub>)Se<sub> 2</sub> Solar Cells

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