High Mobility Thin Film Transistors Fabricated on a Plastic Substrate at a Processing Temperature of 110℃

• Dharam Pal Gosain

• Takashi Noguchi

• Setsuo Usui

書誌事項

タイトル別名

• High Mobility Thin Film Transistors Fabricated on a Plastic Substrate at a Processing Temperature of 110ドC

抄録

We present results from excimer laser processed poly-silicon thin film transistors fabricated on a plastic substrate. Except for the temperature rise during excimer laser irradiation for crystallization, the highest processing temperature that the substrate was subjected to was 110°C. Transistor field-effect mobility of 250 cm 2 /V·s and sub-threshold swing of 0.16 V/decade were measured in these devices. These are the best characteristics reported to date for a thin film transistor (TFT) on a plastic substrate. The performance is attributed to our optimized laser crystallization process of helium sputtered Si films, laser-assisted low-temperature doping processes, and transient annealing.

収録刊行物

• Japanese journal of applied physics. Pt. 2, Letters

  Japanese journal of applied physics. Pt. 2, Letters 39 (3A/B), L179-181, 2000-03

  Tokyo : Japan Society of Applied Physics

キーワード

• sputtered film
• poly-Si
• excimer-laser crystallization
• low temperature doping

詳細情報

• CRID: 1524232505702180096
• NII論文ID: 210000048398
• NII論文ID: 110003928579
• NII書誌ID: AA10650595
• ISSN: 00214922
• ISSN: 13474065
• ISSN: http://id.crossref.org/issn/13474065
• ISSN: http://id.crossref.org/issn/00214922
• DOI: 10.1143/jjap.39.l179
• NDL書誌ID: 5319960
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I5319960
• Web Site: https://iopscience.iop.org/article/10.1143/JJAP.39.L179
• Web Site: https://iopscience.iop.org/article/10.1143/JJAP.39.L179/pdf
• 本文言語コード: en
• NDL 雑誌分類:
  • ZM35(科学技術--物理学)
• データソース種別:
  • NDL
  • Crossref
  • CiNii Articles