Atomic Resolution Imaging on Si(100)2×1 and Si(100)2×1:H Surfaces with Noncontact Atomic Force Microscopy

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  • Yokoyama Kousuke
    Department of Electronic Engineering, Graduate School of Engineering, Osaka University, 2-1 Yamada-oka, Suita, Osaka 565-0871, Japan
  • Ochi Taketoshi
    Department of Electronic Engineering, Graduate School of Engineering, Osaka University, 2-1 Yamada-oka, Suita, Osaka 565-0871, Japan
  • Yoshimoto Akira
    Department of Electronic Engineering, Graduate School of Engineering, Osaka University, 2-1 Yamada-oka, Suita, Osaka 565-0871, Japan
  • Sugawara Yasuhiro
    Department of Electronic Engineering, Graduate School of Engineering, Osaka University, 2-1 Yamada-oka, Suita, Osaka 565-0871, Japan
  • Morita Seizo
    Department of Electronic Engineering, Graduate School of Engineering, Osaka University, 2-1 Yamada-oka, Suita, Osaka 565-0871, Japan

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  • Atomic Resolution Imaging on Si(100)2 * 1 and Si(100)2 * 1 : H Surfaces with Noncontact Atomic Force Microscopy.

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We investigate the difference in atomic resolution images between the Si(100)2 × 1 reconstructed surface with a dangling bond and the Si(100)2 × 1:H monohydride surface without a dangling bond using noncontact atomic force microscopy. On the Si(100)2 × 1 surface, the distance between bright spots is 3.2 ± 0.1 Å, which is larger than that between silicon atoms. On the Si(100)2 × 1:H surface, the distance between bright spots is 3.5 ± 0.1 Å, which is in good agreement with that between hydrogen atoms. For the first time, individual hydrogen atoms are resolved. This means that the distance between measured bright spots forming dimers is increased by the hydrogen termination.

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