Dynamic Study of Stacking Fault Tetrahedra Induced by Electron Irradiation in Copper Crystals
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<jats:p> The behavior of stacking fault tetrahedra (SFT) induced by electron irradiation in copper crystals has been investigated with a high-voltage electron microscope, concentrating especially on a) the growth of individual SFT, and b) the formation of linear arrays of SFT in the <100> direction. The effects of accelerating voltage, specimen temperature and dose rate of electrons on the behavior of SFT have also been examined. </jats:p>
収録刊行物
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- Japanese Journal of Applied Physics
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Japanese Journal of Applied Physics 21 (4A), L235-, 1982-04-01
IOP Publishing
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詳細情報 詳細情報について
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- CRID
- 1360847871767864192
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- NII論文ID
- 110003928989
- 210000022097
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- NII書誌ID
- AA00693547
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- ISSN
- 13474065
- 00214922
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- データソース種別
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