Photoluminescence of the 78 meV Acceptor in GaAs Layers Grown by Molecular Bearn Epitaxy

• Mihara Minoru

  Optoelectronics Joint Research Laboratory

• Mannoh Masaya

  Optoelectronics Joint Research Laboratory

• Shinozaki Keisuke

  Optoelectronics Joint Research Laboratory

• Naritsuka Shigeya

  Optoelectronics Joint Research Laboratory

• Ishii Makoto

  Optoelectronics Joint Research Laboratory

抄録

The 1.44 eV photoluminescence peak of the 78 meV acceptor, previously known only in bulk GaAs crystals, has been observed in lightly Si-doped GaAs layers grown by molecular beam epitaxy. This observation provides strong evidence that the 78 meV acceptor is related to the Ga antisite defect (Ga_As).

収録刊行物

• Japanese Journal of Applied Physics

  Japanese Journal of Applied Physics 25 (7), L611-L613, 1986

  社団法人応用物理学会

詳細情報

• CRID: 1570291227480163456
• NII論文ID: 110003930202
• NII書誌ID: AA10650595
• 本文言語コード: en
• データソース種別:
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