A Simple and Efficient Pretreatment Technology for Selective Tungsten Deposition in Low-Pressure Chemical Vapor Deposition Reactor

• CHANG Kow-Ming

  Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University

• YEH Ta-Hsun

  Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University

• Ll Chi-Hung

  Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University

• WANG Shih-Wei

  Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University

収録刊行物

• Japanese journal of applied physics. Pt. 1, Regular papers & short notes

  Japanese journal of applied physics. Pt. 1, Regular papers & short notes 33 (12), 7071-7075, 1994-12-30

  社団法人応用物理学会

キーワード

• LPCVD
• selective tungsten deposition
• plasma modification
• ex situ pretreatment

詳細情報

• CRID: 1570572702373758208
• NII論文ID: 110003946655
• NII書誌ID: AA10457675
• 本文言語コード: en
• データソース種別:
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