A New Model Silicon/Silicon Oxide Interface Synthesized from H10Si10O15 and Si(100)-2×1
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- Zhang K. Z.
- Chemistry Department, University of Michigan, Ann Arbor, MI 48109–1055, USA
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- Meeuwenberg Leah M.
- Chemistry Department, University of Michigan, Ann Arbor, MI 48109–1055, USA
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- Holl Mark M. Banaszak
- Chemistry Department, University of Michigan, Ann Arbor, MI 48109–1055, USA
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- McFeely F. R.
- IBM T. J. Watson Laboratory, P. O. Box 218, Yorktown Heights, NY 10598, USA
書誌事項
- タイトル別名
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- A New Model Silicon/Silicon Oxide Interface Synthesized from H10Si10O15 and Si(100)-2*1.
- New Model Silicon Silicon Oxide Interfa
- A New Model Silicon/Silicon Oxide Interface Synthesized from H<sub>10</sub>Si<sub>10</sub>O<sub>15</sub> and Si(100)- 2×1
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抄録
A model silicon/silicon oxide interface, synthesized from the spherosiloxane H10Si10O15 and Si(100)-2× 1, has been characterized by study of the Si 2p core-levels and valence band region using soft X-ray photoemission. In addition, the intact H10Si10O15 cluster was condensed at -160° C onto Si(111)-H and characterized. The measured photoemission features are in good agreement with the results of previous model studies.
収録刊行物
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- Japanese Journal of Applied Physics
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Japanese Journal of Applied Physics 36 (3B), 1622-1626, 1997
The Japan Society of Applied Physics
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詳細情報 詳細情報について
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- CRID
- 1390282681224388608
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- NII論文ID
- 110003946855
- 130004523488
- 210000040828
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- NII書誌ID
- AA10457675
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- ISSN
- 13474065
- 00214922
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- NDL書誌ID
- 4196680
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- 本文言語コード
- en
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- データソース種別
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- JaLC
- NDL
- Crossref
- CiNii Articles
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- 抄録ライセンスフラグ
- 使用不可