Single Process to Deposit Lead Zirconate Titanate (PZT) Thin Film by a Hydrothermal Method.

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  • Morita Takeshi
    Department of Precision Machinery Engineering, Graduate School of Engineering, the University of Tokyo, 7–3–1 Hongo, Bunkyo–ku, Tokyo 113, Japan
  • Kanda Takefumi
    Department of Precision Machinery Engineering, Graduate School of Engineering, the University of Tokyo, 7–3–1 Hongo, Bunkyo–ku, Tokyo 113, Japan
  • Yamagata Yutaka
    Kanagawa Academy of Science and Technology, Higuchi “Ultimate Mechatronics” Project, KSP East Blk. 405, Sakado 3–2–1, Takatu–ku, Kanagawa city, Kanagawa 213, Japan
  • Kurosawa Minoru
    Department of Precision Machinery Engineering, Graduate School of Engineering, the University of Tokyo, 7–3–1 Hongo, Bunkyo–ku, Tokyo 113, Japan
  • Higuchi Toshiro
    Department of Precision Machinery Engineering, Graduate School of Engineering, the University of Tokyo, 7–3–1 Hongo, Bunkyo–ku, Tokyo 113, Japan

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Abstract

The hydrothermal method to deposit lead zirconate titanate (PZT) thin film is a new method reported by Tsurumi et al. in 1991. This method consists of two linked processes. We have found that the film deposited by the first process is not PZT but separated lead zirconate (PZ) and lead titanate (PT). In this paper, we report that a PZT thin film was successfully deposited by a single process. The chemical construction and composition of the film were analyzed. The Zr/(Zr+Ti) ratio of the PZT film was controlled by changing the ionic composition of the solution.

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