Effects of Bi<sub>2</sub>O<sub>3</sub> Impurities in Ceramic ZnO on Photoacoustic Spectra and Current-Voltage Characteristics

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  • Toyoda Taro
    Department of Applied Physics and Chemistry, The University of Electro–Communications, 1–5–1 Chofugaoka, Chofu, Tokyo 182–8585, Japan
  • Shimamoto Satoshi
    Department of Applied Physics and Chemistry, The University of Electro–Communications, 1–5–1 Chofugaoka, Chofu, Tokyo 182–8585, Japan

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  • Effects of Bi2O3 Impurities in Ceramic ZnO on Photoacoustic Spectra and Current-Voltage Characteristics.

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Photoacoustic (PA) spectroscopy is applied to study the optical absorption of ceramic ZnO doped with 1 mol% Bi2O3 sintered at various temperatures (700-1100°C). PA signal intensities plotted semilogarithmically reveal two individual regions below 3.0 eV (A: 3.0-2.7 eV; B: 2.6-2.4 eV). The steepness factor (slope of exponential optical absorption) obtained at region A decreases as the sintering temperature increases, indicating an increase of Bi2O3 segregation at particle surfaces and grain boundaries which might contribute to the interface states. The steepness factor at region B increases rapidly as the sintering temperature increases, indicating an occurrence of structural ordering by the Bi2O3 liquid phase sintering effect. The varistor effect (highly nonohmic behavior in the current-voltage characteristics) of ceramic ZnO doped with 1 mol% Bi2O3 is correlated with the characterization obtained by the PA method.

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