Isotope Effects on the Dissociation of a Hydrogen-Carbon Complex in Silicon.

• Kamiura Yoichi

  Faculty of Engineering, Okayama University, 3-1-1 Tsushima-naka, Okayama 700-8530, Japan

• Fukuda Kazuhisa

  Faculty of Engineering, Okayama University, 3-1-1 Tsushima-naka, Okayama 700-8530, Japan

• Ohyama Shigeki

  Faculty of Engineering, Okayama University, 3-1-1 Tsushima-naka, Okayama 700-8530, Japan

• Yamashita Yoshifumi

  Faculty of Engineering, Okayama University, 3-1-1 Tsushima-naka, Okayama 700-8530, Japan

抄録

We have found, by deep-level transient spectroscopy (DLTS), that the dissociation rate of a deuterium-carbon complex in silicon is about half that of a hydrogen-carbon complex, while the activation energies for the dissociation of both the complexes are the same. This clearly proves that both the complexes have the same atomic configuration and their dissociation is governed by the atomic jump of hydrogen (deuterium).

収録刊行物

• Japanese Journal of Applied Physics

  Japanese Journal of Applied Physics 39 (3A), 1098-1099, 2000

  The Japan Society of Applied Physics

キーワード

• defect
• hydrogen
• carbon
• Si
• dissociation
• DLTS

詳細情報

• CRID: 1390001206254063104
• NII論文ID: 210000046777
• NII論文ID: 110003947580
• NII書誌ID: AA10457675
• DOI: 10.1143/jjap.39.1098
• ISSN: 13474065
• ISSN: 00214922
• Web Site: https://iopscience.iop.org/article/10.1143/JJAP.39.1098
• Web Site: https://iopscience.iop.org/article/10.1143/JJAP.39.1098/pdf
• 本文言語コード: en
• データソース種別:
  • JaLC
  • Crossref
  • CiNii Articles
• 抄録ライセンスフラグ: 使用不可