Jpn. Improved time-of-flight technique for measuring carrier mobility in thin films of organic electroluminescent materials

• Chen Baijun

  Centre Of Super-Diamond and Advanced Films (COSDAF) and Department of Physics and Materials Science,<BR> City University of Hong Kong, Hong Kong, China Optoelectronics Research Centre (ORC) and Department of Electronic Engineering,<BR> City University of Hong Kong, Hong Kong, China On leave from State Key Laboratory on Integrated Optoelectronics, Department of Electronic Engineering,<BR> Jilin University, Changchun, China

• Lee Chun-sing

  Centre Of Super-Diamond and Advanced Films (COSDAF) and Department of Physics and Materials Science,<BR> City University of Hong Kong, Hong Kong, China

• Lee Shuit-tong

  Centre Of Super-Diamond and Advanced Films (COSDAF) and Department of Physics and Materials Science,<BR> City University of Hong Kong, Hong Kong, China

• Webb Patrick

  Optoelectronics Research Centre (ORC) and Department of Electronic Engineering,<BR> City University of Hong Kong, Hong Kong, China

• Chan Yan-cheong

  Optoelectronics Research Centre (ORC) and Department of Electronic Engineering,<BR> City University of Hong Kong, Hong Kong, China

• Gambling William

  Optoelectronics Research Centre (ORC) and Department of Electronic Engineering,<BR> City University of Hong Kong, Hong Kong, China

• Tian He

  Institute of Fine Chemicals, East China University of Science and Technology, Shanghai 200237, China

• Zhu Weihong

  Institute of Fine Chemicals, East China University of Science and Technology, Shanghai 200237, China

書誌事項

タイトル別名

• Improved Time-of-Flight Technique for Measuring Carrier Mobility in Thin Films of Organic Electroluminescent Materials

抄録

Using an improved time-of-flight (TOF) technique, the drift mobilities of electrons and holes in organic films prepared on silicon or indium-tin-oxide (ITO)-coated glass substrates have been determined. For the samples on silicon, the silicon was also used as a carrier-generating layer. This substantially increased the number of charge carriers generated and thus resulted in a higher intensity electrical signal. Consequently, the thickness of the organic layers can be reduced to less than 1/10 of the typical values (several microns) required in the conventional TOF measurement. The typical thickness of the organic layer in the present work is 400 nm. For organic materials with a high optical absorption coefficient, samples for the TOF measurement can be prepared by directly depositing these materials onto ITO glass substrates with a thickness of about 1000 nm. For both types of substrate, the thickness of the organic layer is much closer to the typical value used in organic electroluminescent devices. The signal, and thus the accuracy, in the present measurement were much improved over those of the conventional TOF measurement. The logarithm of the drift mobility changed linearly with the square root of the applied electric field.

収録刊行物

• Japanese Journal of Applied Physics

  Japanese Journal of Applied Physics 39 (3A), 1190-1192, 2000

  The Japan Society of Applied Physics

キーワード

• time of flight
• carrier mobility
• organic EL materials

詳細情報

• CRID: 1390282681246775552
• NII論文ID: 110003947603
• NII論文ID: 210000046801
• NII書誌ID: AA10457675
• DOI: 10.1143/jjap.39.1190
• ISSN: 13474065
• ISSN: 00214922
• ISSN: http://id.crossref.org/issn/00214922
• NDL書誌ID: 5320314
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I5320314
• Web Site: https://iopscience.iop.org/article/10.1143/JJAP.39.1190
• Web Site: https://iopscience.iop.org/article/10.1143/JJAP.39.1190/pdf
• 本文言語コード: en
• データソース種別:
  • JaLC
  • NDL
  • Crossref
  • CiNii Articles
• 抄録ライセンスフラグ: 使用不可