Measurement of Fluorocarbon Radicals Generated from C₄F₈/H₂ Inductively Coupled Plasma: Study on SiO₂ Selective Etching Kinetics

• Kubota Kazuhiro

  Department of Electrical Engineering, Hiroshima University, 1–4–1, Kagamiyama, Higashi–Hiroshima, 724, Japan

• Matsumoto Hiroyuki

  Department of Electrical Engineering, Toyo University, 2100, Nakanodai, Kujirai, Kawagoe, 350, Japan

• Shindo Haruo

  Faculty of Engineering, Fukuyama University, 1, Gakuencho, Fukuyama 729–02, Japan

• Shingubara Shoso

  Department of Electrical Engineering, Hiroshima University, 1–4–1, Kagamiyama, Higashi–Hiroshima, 724, Japan

• Horiike Yasuhiro

  Department of Electrical Engineering, Toyo University, 2100, Nakanodai, Kujirai, Kawagoe, 350, Japan

書誌事項

タイトル別名

• Measurement of Fluorocarbon Radicals Generated from C4F8/H2 Inductively Coupled Plasma: Study on SiO2 Selective Etching Kinetics.

抄録

The kinetics of highly selective SiO₂ etching were studied on the basis of appearance mass spectroscopy (AMS) measurement of fluorocarbon radicals generated from C₄F₈/H₂ inductlvely coupled plasma (ICP). Results obtained by varying of H₂ concentration in C₄F₈, total pressure and RF power implied that CF₁ radical played a major role in the polymer film deposition. In particular, radical measurements carried out by varying the length of a quartz tube which was set in front of an inlet of radicals effusing into AMS revealed that CF₂ radical might not contribute to the polymer deposition and that the sticking probability of CF₁ radical was reduced considerably in the presence of hydrogen. It was also observed that in etching using a capillary plate as a high-aspect-ratio mask, the carbon-rich polymer film is deposited on the Si bottom surface in the presence of hydrogen at high CF₁/CF₂ radical density ratio. Accordingly, CF₁ radicals whose surface loss is suppressed in the presence of hydrogen are likely to arrive at deep the bottom surface, forming the carbon-rich polymer by reaction of hydrogen with fluorine from CF₁ radicals.

収録刊行物

• Japanese Journal of Applied Physics

  Japanese Journal of Applied Physics 34 (4B), 2119-2124, 1995

  The Japan Society of Applied Physics

キーワード

• etching kinetics
• SiO<SUB> 2</SUB> selective etching in C<SUB> 4</SUB>F<SUB> 8</SUB>/H<SUB> 2</SUB>
• appearance mass spectroscopy
• application of capillary plate
• inductively coupled plasma

詳細情報

• CRID: 1390282681223749632
• NII論文ID: 110003954950
• NII論文ID: 210000037237
• NII論文ID: 130004521252
• NII書誌ID: AA10457675
• DOI: 10.1143/jjap.34.2119
• COI: 1:CAS:528:DyaK2MXlslyju7w%3D
• ISSN: 13474065
• ISSN: 00214922
• ISSN: http://id.crossref.org/issn/13474065
• Web Site: https://iopscience.iop.org/article/10.1143/JJAP.34.2119
• Web Site: https://iopscience.iop.org/article/10.1143/JJAP.34.2119/pdf
• 本文言語コード: en
• データソース種別:
  • JaLC
  • Crossref
  • CiNii Articles
• 抄録ライセンスフラグ: 使用不可