Highly Oriented Pb(Zr, Ti)O<sub>3</sub> Thin Films Prepared by Pulsed Laser Ablation on GaAs and Si Substrates with MgO Buffer Layer

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  • Masuda Atsushi
    Department of Electrical and Computer Engineering, Faculty of Engineering, Kanazawa University, Kanazawa 920, Japan
  • Yamanaka Yasuhiro
    Department of Electrical and Computer Engineering, Faculty of Engineering, Kanazawa University, Kanazawa 920, Japan
  • Tazoe Mitsutoshi
    Department of Electrical and Computer Engineering, Faculty of Engineering, Kanazawa University, Kanazawa 920, Japan
  • Yonezawa Yasuto
    Industrial Research Institute of Ishikawa Prefecture, Tomizu, Kanazawa 920–02, Japan
  • Morimoto Akiharu
    Department of Electrical and Computer Engineering, Faculty of Engineering, Kanazawa University, Kanazawa 920, Japan
  • Shimizu Tatsuo
    Department of Electrical and Computer Engineering, Faculty of Engineering, Kanazawa University, Kanazawa 920, Japan

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  • Highly Oriented Pb(Zr,Ti)O3 Thin Films Prepared by Pulsed Laser Ablation on GaAs and Si Substrates with MgO Buffer Layer.

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Highly [100]-oriented Pb(Zr, Ti)O3 (PZT) films were prepared on (100) GaAs and (100) Si substrates with MgO buffer layer by pulsed laser ablation (PLA). The depth profile of the constituent elements observed by X-ray photoelectron spectroscopy (XPS) shows that there are no remarkable interdiffusion and/or no formation of an alloying layer at both interfaces between PZT and MgO and between MgO and GaAs substrate. The [100]-oriented perovskite PZT films which exhibit the ferroelectric hysteresis loop were obtained on (100) Si substrate with MgO buffer layer with the thickness of only 50 Å, showing that this technique promises the realization of metal-ferroelectric-semiconductor field-effect transistors (MFS-FETs).

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