Cu Film Growth on a Si(111) Surface Studied by Scanning Tunneling Microscopy

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Author(s)

Abstract

We observed a change in growth mode of Cu, while dynamically observing Cu film growth on a Si(111)-7× 7 surface during Cu deposition at room temperature by scanning tunneling microscopy (STM). Initially, Cu atoms were adsorbed mostly on the faulted halves of the 7× 7 structure. Then, up to about 2 ML coverage, small Cu islands appeared. As the coverage increased from 2 to 3 ML, the growth mode changed into quasi-layer-by-layer growth. With further deposition, 3-D islands having hexagonal terraces grew.

Journal

  • Japanese Journal of Applied Physics

    Japanese Journal of Applied Physics 35(6), 3730-3733, 1996-06-01

    The Japan Society of Applied Physics

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Codes

  • NII Article ID (NAID)
    110003955517
  • NII NACSIS-CAT ID (NCID)
    AA10457675
  • Text Lang
    ENG
  • Article Type
    ART
  • Journal Type
    大学紀要
  • ISSN
    00214922
  • NDL Article ID
    4059879
  • NDL Source Classification
    ZM35(科学技術--物理学)
  • NDL Call No.
    Z53-A375
  • Data Source
    CJP  NDL  NII-ELS  J-STAGE 
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