Cu Film Growth on a Si(111) Surface Studied by Scanning Tunneling Microscopy
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We observed a change in growth mode of Cu, while dynamically observing Cu film growth on a Si(111)-7× 7 surface during Cu deposition at room temperature by scanning tunneling microscopy (STM). Initially, Cu atoms were adsorbed mostly on the faulted halves of the 7× 7 structure. Then, up to about 2 ML coverage, small Cu islands appeared. As the coverage increased from 2 to 3 ML, the growth mode changed into quasi-layer-by-layer growth. With further deposition, 3-D islands having hexagonal terraces grew.
- Japanese Journal of Applied Physics
Japanese Journal of Applied Physics 35(6), 3730-3733, 1996-06-01
The Japan Society of Applied Physics