Cu Film Growth on a Si(111) Surface Studied by Scanning Tunneling Microscopy.

• Tomimatsu Satoshi

  Central Research Lab., Hitachi, Ltd., Kokubunji Tokyo 185, Japan

• Hasegawa Tsuyoshi

  Central Research Lab., Hitachi, Ltd., Kokubunji Tokyo 185, Japan

• Kohno Makiko

  Central Research Lab., Hitachi, Ltd., Kokubunji Tokyo 185, Japan

• Hosoki Shigeyuki

  Central Research Lab., Hitachi, Ltd., Kokubunji Tokyo 185, Japan

書誌事項

タイトル別名

• Cu Film Growth on a Si 111 Surface Stud

抄録

We observed a change in growth mode of Cu, while dynamically observing Cu film growth on a Si(111)-7× 7 surface during Cu deposition at room temperature by scanning tunneling microscopy (STM). Initially, Cu atoms were adsorbed mostly on the faulted halves of the 7× 7 structure. Then, up to about 2 ML coverage, small Cu islands appeared. As the coverage increased from 2 to 3 ML, the growth mode changed into quasi-layer-by-layer growth. With further deposition, 3-D islands having hexagonal terraces grew.

収録刊行物

• Japanese Journal of Applied Physics

  Japanese Journal of Applied Physics 35 (6B), 3730-3733, 1996

  The Japan Society of Applied Physics

キーワード

• Cu
• Si(111)
• DAS structure
• quasi-layer-by-layer
• 3-D island

詳細情報

• CRID: 1390282681225873664
• NII論文ID: 210000039464
• NII論文ID: 110003955517
• NII書誌ID: AA10457675
• DOI: 10.1143/jjap.35.3730
• ISSN: 13474065
• ISSN: 00214922
• NDL書誌ID: 4059879
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I4059879
• Web Site: https://iopscience.iop.org/article/10.1143/JJAP.35.3730
• Web Site: https://iopscience.iop.org/article/10.1143/JJAP.35.3730/pdf
• 本文言語コード: en
• データソース種別:
  • JaLC
  • NDL
  • Crossref
  • CiNii Articles
• 抄録ライセンスフラグ: 使用不可