Conductance through Laterally Coupled Quantum Dots.

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  • Ueno Hiroaki
    Department of Electronic Engineering, Osaka University, 2–1 Yamada–oka, Suita, Osaka 565–0871, Japan
  • Moriyasu Katsuji
    Department of Electronic Engineering, Osaka University, 2–1 Yamada–oka, Suita, Osaka 565–0871, Japan
  • Wada Yuuko
    Department of Electronic Engineering, Osaka University, 2–1 Yamada–oka, Suita, Osaka 565–0871, Japan
  • Osako Shin–ichi
    Department of Electronic Engineering, Osaka University, 2–1 Yamada–oka, Suita, Osaka 565–0871, Japan
  • Kubo Hitoshi
    Department of Electronic Engineering, Osaka University, 2–1 Yamada–oka, Suita, Osaka 565–0871, Japan
  • Mori Nobuya
    Department of Electronic Engineering, Osaka University, 2–1 Yamada–oka, Suita, Osaka 565–0871, Japan
  • Hamaguchi Chihiro
    Department of Electronic Engineering, Osaka University, 2–1 Yamada–oka, Suita, Osaka 565–0871, Japan

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We fabricated laterally coupled quantum dots on a GaAs/ Al0.3Ga0.7As single quantum well, and studied their transport properties. We focused on the geometrical dependence of the conductance through laterally coupled quantum dots. The quantum-dot-array pattern was defined by electron beam lithography and deeply etched through the GaAs quantum well layer. We measured the I-V characteristics of two different types of samples, which consisted of ten quantum dots in straight and zigzag forms. For the straight coupled quantum dots, we observed a single peak in the conductance at zero applied bias. On the other hand, for the zigzag coupled quantum dots, we observed double peaks in the conductance at finite applied biases. The difference in I-V characteristics is associated with a collimated electron beam entering into the quantum dots.

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