Nanoscale ErP Islands on InP(001) Substrate Grown by Organometallic Vapor-Phase Epitaxy.

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  • Bolotov Leonid
    Center for Integrated Research in Science and Engineering, Nagoya University, Chikusa–ku, Nagoya 464–8603, Japan
  • Tsuchiya Takahiro
    Center for Integrated Research in Science and Engineering, Nagoya University, Chikusa–ku, Nagoya 464–8603, Japan
  • Ito Takashi
    Department of Materials Science and Engineering, Nagoya University, Chikusa–ku, Nagoya 464–8603, Japan
  • Fujiwara Yasufumi
    Department of Materials Science and Engineering, Nagoya University, Chikusa–ku, Nagoya 464–8603, Japan
  • Takeda Yoshikazu
    Department of Materials Science and Engineering, Nagoya University, Chikusa–ku, Nagoya 464–8603, Japan
  • Nakamura Arao
    Center for Integrated Research in Science and Engineering, Nagoya University, Chikusa–ku, Nagoya 464–8603, Japan

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We have investigated nanoscale ErP islands formed on InP(001) during Er exposure in organometallic vapor-phase epitaxial growth by means of atomic force microscopy and scanning tunneling microscopy. Different features of surface morphologies are observed depending on the growth temperature and the ErP coverage. The generation of misfit dislocation arrays along the [1\bar10] direction leads to anisotropic strain relaxation that originates from the anisotropy of the atomic bonds at the interface. The residual strain of partially relaxed islands is ~2% for growth at 530°C, which corresponds to the minimum of total areal energy of the strained film. Current imaging tunneling spectroscopy shows a high tunnel current at dislocations and ErP island edges suggesting the existence of high-density surface states near the Fermi level and the decrease in tunneling barrier height.

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