An Optoelectronic Logic Gate Monolithically Integrating Resonant Tunneling Diodes and a Uni-Traveling-Carrier Photodiode.

• Akeyoshi Tomoyuki

  NTT System Electronics Laboratories, 3–1 Morinosato Wakamiya, Atsugi–shi, Kanagawa 243–0198, Japan

• Shimizu Naofumi

  NTT Optical Network Systems Laboratories, 1–1 Hikari–no–oka, Yokosuka–shi, Kanagawa 239–0847, Japan

• Osaka Jiro

  NTT System Electronics Laboratories, 3–1 Morinosato Wakamiya, Atsugi–shi, Kanagawa 243–0198, Japan

• Yamamoto Masafumi

  NTT System Electronics Laboratories, 3–1 Morinosato Wakamiya, Atsugi–shi, Kanagawa 243–0198, Japan

• Ishibashi Tadao

  NTT System Electronics Laboratories, 3–1 Morinosato Wakamiya, Atsugi–shi, Kanagawa 243–0198, Japan

• Sano Kimikazu

  NTT Optical Network Systems Laboratories, 1–1 Hikari–no–oka, Yokosuka–shi, Kanagawa 239–0847, Japan

• Murata Koichi

  NTT Optical Network Systems Laboratories, 1–1 Hikari–no–oka, Yokosuka–shi, Kanagawa 239–0847, Japan

• Sano Eiichi

  NTT Optical Network Systems Laboratories, 1–1 Hikari–no–oka, Yokosuka–shi, Kanagawa 239–0847, Japan

書誌事項

タイトル別名

• Optoelectronic Logic Gate Monolithically Integrating Resonant Tunneling Diodes and a Uni-Traveling-Carrier Photodiode

抄録

InP-based InGaAs/AlAs/InAs resonant tunneling diodes (RTDs) and a uni-traveling-carrier photodiode (UTC-PD) are monolithically integrated to construct an optoelectronic logic gate. RTD structures are regrown by molecular beam epitaxy on the top of UTC-PD structures grown by metalorganic chemical vapor deposition. The characteristics of the regrown RTDs are almost the same as those of conventional RTDs directly grown on semi-insulating InP substrates. The UTC-PD provides a sufficient current drivability along with a high-speed operation demonstrated by the 3-dB bandwidth of 80 GHz, even at the low bias voltage corresponding to the peak voltage of the RTD. An optoelectronic logic gate using two RTDs and one UTC-PD was fabricated. This simple optoelectronic logic gate exhibited high-speed delayed flip-flop operation of 40 Gbit/s at a small power consumption of 7.75 mW. These results suggest that an optoelectronic logic gate using RTDs and a UTC-PD is suitable for the construction of ultrahigh-speed and low-power optoelectronic circuits.

収録刊行物

• Japanese Journal of Applied Physics

  Japanese Journal of Applied Physics 38 (2B), 1223-1226, 1999

  The Japan Society of Applied Physics

キーワード

• resonant tunneling diode
• photodiode
• optoelectronic logic gate
• flip-flop
• monolithic integration
• MBE
• MOCVD
• InP
• InGaAs

詳細情報

• CRID: 1390001206253782400
• NII論文ID: 110003955824
• NII論文ID: 30021824871
• NII論文ID: 130004526002
• NII論文ID: 210000044756
• NII書誌ID: AA10457675
• DOI: 10.1143/jjap.38.1223
• ISSN: 13474065
• ISSN: 00214922
• NDL書誌ID: 4688462
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I4688462
• Web Site: https://iopscience.iop.org/article/10.1143/JJAP.38.1223
• Web Site: https://iopscience.iop.org/article/10.1143/JJAP.38.1223/pdf
• 本文言語コード: en
• データソース種別:
  • JaLC
  • NDL
  • Crossref
  • CiNii Articles
• 抄録ライセンスフラグ: 使用不可