Lateral Diffusion Distance Measurement of 40-80 nm Junctions by Etching/TEM-Electron Energy Loss Spectroscopy Method

• Kunimune Yorinobu

  ULSI Device Development Laboratories, NEC Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229–1198, Japan

• Nishio Naoharu

  ULSI Device Development Laboratories, NEC Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229–1198, Japan

• Kodama Noriyuki

  ULSI Device Development Laboratories, NEC Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229–1198, Japan

• Kikuchi Hiroaki

  ULSI Device Development Laboratories, NEC Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229–1198, Japan

• Toda Takeshi

  ULSI Device Development Laboratories, NEC Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229–1198, Japan

• Mineji Akira

  ULSI Device Development Laboratories, NEC Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229–1198, Japan

• Shishiguchi Seiichi

  ULSI Device Development Laboratories, NEC Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229–1198, Japan

• Saito Shuichi

  ULSI Device Development Laboratories, NEC Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229–1198, Japan

書誌事項

タイトル別名

• Lateral Diffusion Distance Measurement of 40-80 nm Junctions by Etching/TEM-Electron Energy Loss Spectroscopy Metho.

抄録

A new technique to measure the lateral diffusion distance of boron has been developed by wet-etching combined with TEM and Electron Energy Loss Spectroscopy (TEM-EELS). The position at a dopant concentration of 5× 10¹⁸ cm^-3 can be correctly delineated with a spatial resolution of less than 5 nm. This technique is based on the fact that the gradient of the etched surface changes discontinuously at a dopant concentration of 5× 10¹⁸ cm^-3. This characteristic appeared for all carrier profiles as long as the etching time was sufficiently long. Etching time optimization is needed because an incubation time exists before the etching starts and because the incubation time depends on carrier distribution. Thickness distribution after the etching is measured by TEM-EELS which enables a high spatial resolution measurement. The lateral diffusion distance at the pn junction measured by this technique was about 0.6 times of the vertical diffusion distance for 40-80 nm junctions. These results were compared with those obtained by an electrical C-V measurement, and were consistent.

収録刊行物

• Japanese Journal of Applied Physics

  Japanese Journal of Applied Physics 38 (4B), 2314-2318, 1999

  The Japan Society of Applied Physics

キーワード

• lateral diffusion distance
• wet-etching
• TEM-EELS
• two-dimensional dopant distribution

詳細情報

• CRID: 1390282681230228864
• NII論文ID: 30021832690
• NII論文ID: 110003955925
• NII論文ID: 210000045022
• NII書誌ID: AA10457675
• DOI: 10.1143/jjap.38.2314
• ISSN: 13474065
• ISSN: 00214922
• NDL書誌ID: 4730223
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I4730223
• Web Site: https://iopscience.iop.org/article/10.1143/JJAP.38.2314
• Web Site: https://iopscience.iop.org/article/10.1143/JJAP.38.2314/pdf
• 本文言語コード: en
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