Evaluation of Interface SiOx Transition Layer in Ultrathin Si02 Film by Oscillatory Tunneling Current-Voltage Characteristics in Photo-CVD Si02-Si Diode

• Maida Osamu

  Department of Physical Science, Graduate School of Engineering Science, Osaka University, Machikaneyama–Cho 1–3, Toyonaka, Osaka 560–8531, Japan

• Okada Norio

  Department of Physical Science, Graduate School of Engineering Science, Osaka University, Machikaneyama–Cho 1–3, Toyonaka, Osaka 560–8531, Japan

• Kanashima Takeshi

  Department of Physical Science, Graduate School of Engineering Science, Osaka University, Machikaneyama–Cho 1–3, Toyonaka, Osaka 560–8531, Japan

• Okuyama Masanori

  Department of Physical Science, Graduate School of Engineering Science, Osaka University, Machikaneyama–Cho 1–3, Toyonaka, Osaka 560–8531, Japan

書誌事項

タイトル別名

• Evaluation of Interface SiOx Transition Layer in Ultrathin SiO2 Film by Oscillatory Tunneling Current-Voltage Characteristics in Photo-CVD SiO2-Si Diode.
• Evaluation of Interface SiO_x Transition Layer in Ultrathin SiO₂ Film by Oscillatory Tunneling Current-Voltage Characteristics in Photo-CVD SiO₂-Si Diode

抄録

The interface transition layer in ultrathin SiO₂ film is characterized by analyzing the oscillatory tunneling current. SiO₂ thin films are deposited on atomically flat Si at low temperature (300^°C) by photo-induced chemical vapor deposition (photo-CVD) and their electrical characteristics are investigated. The electrical characteristics of the SiO₂/Si diode are improved by annealing in O₂ atmosphere under ultraviolet irradiation, and the current becomes small and equivalent to that of a thermally grown oxide. Tunneling current through the ultrathin gate oxide is observed to exhibit oscillatory behavior in the Fowler-Nordheim (FN) tunneling region, which results from the interference of the incident and reflected electron waves at the SiO₂/Si interface. It is clarified from theoretical calculation of the tunneling current that the amplitude and phase of the oscillatory current are strongly affected by the transition layer thickness. It is concluded that the interface transition layer of photo-CVD SiO₂ film is thinner than that of thermally grown SiO₂ film from analysis of the amplitude of the oscillatory profile.

収録刊行物

• Japanese Journal of Applied Physics

  Japanese Journal of Applied Physics 38 (4B), 2341-2344, 1999

  The Japan Society of Applied Physics

キーワード

• photo-CVD
• Si/SiO₂ interface
• UV/O₂ annealing
• Fowler-Nordheim tunneling current
• interface transition layer

詳細情報

• CRID: 1390001206253527680
• NII論文ID: 210000045028
• NII論文ID: 110003955931
• NII書誌ID: AA10457675
• DOI: 10.1143/jjap.38.2341
• ISSN: 13474065
• ISSN: 00214922
• NDL書誌ID: 4730373
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I4730373
• Web Site: https://iopscience.iop.org/article/10.1143/JJAP.38.2341
• Web Site: https://iopscience.iop.org/article/10.1143/JJAP.38.2341/pdf
• 本文言語コード: en
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