Preparation and Characterization of Epitaxial LiNbO<sub>3</sub> Thin Films by Metal-Organic Chemical Vapor Deposition

  • Shiratsuyu Kosuke
    Research and Development Division, Murata Mfg. Co., Ltd., 2288 Oshinohara, Yasu, Shiga 520–2393, Japan
  • Sakurai Atsushi
    Research and Development Division, Murata Mfg. Co., Ltd., 2288 Oshinohara, Yasu, Shiga 520–2393, Japan
  • Tanaka Katsuhiko
    Research and Development Division, Murata Mfg. Co., Ltd., 2288 Oshinohara, Yasu, Shiga 520–2393, Japan
  • Sakabe Yukio
    Research and Development Division, Murata Mfg. Co., Ltd., 2288 Oshinohara, Yasu, Shiga 520–2393, Japan

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  • Preparation and Characterization of Epitaxial LiNbO3 Thin Films by Metal-Organic Chemical Vapor Deposition.

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LiNbO3 thin films were prepared on sapphire substrates by the metal-organic chemical vapor deposition (MOCVD) technique, using lithium dipivaloylmethanate [Li(DPM)] and niobium pentaethoxide [Nb(O-C2H5)5] precursors. LiNbO3 films were deposited on (001) and (012) sapphire substrates and their crystalline structures were investigated by X-ray diffraction and pole figure analyses. The LiNbO3 films deposited on (001) sapphire substrates showed strong (001) orientation involving twin structures, and highly (100)-oriented films were obtained on the (012) sapphire substrates. The full width at half maximum (FWHM) of the X-ray rocking curves of (001)-oriented and (100)-oriented LiNbO3 films were, respectively, 0.16°and 0.21°. Field emission scanning electron microscope (FE-SEM) analysis showed that highly (100)-oriented LiNbO3 films had unique morphologies with long and narrow grains. The grains align in plane on the (012) sapphire substrate, and the c-axis of the LiNbO3 film is parallel to the short axis of the grains.

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