Nitrogen-Doping Effects on Electrical Properties of Hydrogenated Microcrystalline Silicon as Studied by Electron Paramagnetic Resonance and Conductivity.

• Ehara Takashi

  School of Science and Engineering, Ishinomaki Senshu University, Shinmito 1, Minamisakai, Ishinomaki, Miyagi 986-8580, Japan

• Amino Tetsuya

  School of Science and Engineering, Ishinomaki Senshu University, Shinmito 1, Minamisakai, Ishinomaki, Miyagi 986-8580, Japan

• Shinomiya Hiroyuki

  School of Science and Engineering, Ishinomaki Senshu University, Shinmito 1, Minamisakai, Ishinomaki, Miyagi 986-8580, Japan

• Ikoma Tadaaki

  Institute for Chemical Reaction Science, Tohoku University, Katahira 2-1-1, Aoba-ku, Sendai 980-8577, Japan

• Akiyama Kimio

  Institute for Chemical Reaction Science, Tohoku University, Katahira 2-1-1, Aoba-ku, Sendai 980-8577, Japan

• Tero-Kubota Shozo

  Institute for Chemical Reaction Science, Tohoku University, Katahira 2-1-1, Aoba-ku, Sendai 980-8577, Japan

抄録

We have examined Raman scattering, X-ray diffraction, electron paramagnetic resonance (EPR) spectra and the conductivity of nitrogen-doped hydrogenated microcrystalline silicon. The EPR signals due to conduction electrons have been observed in the doped films, except for highly doped samples that have no microcrystalline fraction. The result indicates that the doped nitrogen atom acts as an electron donor in the microcrystalline silicon. The temperature dependence of the conductivity clarify that the activation energy depends on the doping level. The influence of the doping level on the conductivity can be interpreted in terms of the balance of the effective electron donation and the decrease of carrier mobility due to a decrease of the microcrystalline phase volume ratio. At temperatures lower than approximately 180 K, the conductivity shows little variation. This is explained using a model of the hopping conduction, in terms of defect states for all samples.

収録刊行物

• Japanese Journal of Applied Physics

  Japanese Journal of Applied Physics 39 (1), 31-34, 2000

  The Japan Society of Applied Physics

キーワード

• electron paramagnetic resonance
• microcrystalline silicon
• nitrogen
• doping
• conduction electron
• dangling bond

詳細情報

• CRID: 1390001206252759808
• NII論文ID: 210000047252
• NII論文ID: 110003956306
• NII書誌ID: AA10457675
• DOI: 10.1143/jjap.39.31
• ISSN: 13474065
• ISSN: 00214922
• NDL書誌ID: 4974747
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I4974747
• Web Site: https://iopscience.iop.org/article/10.1143/JJAP.39.31
• Web Site: https://iopscience.iop.org/article/10.1143/JJAP.39.31/pdf
• 本文言語コード: en
• データソース種別:
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