De Haas-van Alphen Effect of UB_2, UB_4 and UGa_3 :
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- YAMAMOTO,Etsuji
- Advanced Science Research Center, Japan Atomic Energy Research Institute
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- HONMA,Tetsuo
- Advanced Science Research Center, Japan Atomic Energy Research Institute
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- HAGA,Yoshinori
- Advanced Science Research Center, Japan Atomic Energy Research Institute
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- AOKI,Dai
- Graduate School of Science, Osaka University
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- HEDO,Masato
- Graduate School of Science, Osaka University
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- INADA,Yoshihiko
- Graduate School of Science, Osaka University
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- SETTAI,Rikio
- Graduate School of Science, Osaka University
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- YAMAGAMI,Hiroshi
- Graduate School of Science, Tohoku University
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- ONUKI,Yoshichika
- Advanced Science Research Center, Japan Atomic Energy Research Institute:Graduate School of Science, Osaka University
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抄録
We grew single crystals of UB_2 and UB_4 by the Czochralski pulling method and of Uga_3 by the flux method and observed the de Haas-van Alphen (dHvA) oscillations. For UB_2, dHvA frequencies are well explained by the 5f-itinerant relativistic band theory. UB_2 is compensated metal and the Fermi surface consists of two closed but corrugated Fermi surfaces. The cyclotron masses are moderately heavy, ranging from 1.2 to 7.7m_0. For UB_4, we observed dHvA branches in a limited angle region. The cyclotron mass is in the range of 3.0 to 8.4m_0. We also found four dHvA branches in UGa_3, which correspond to ellipsoidal Fermi surfaces.
収録刊行物
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- JJAP series
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JJAP series 11 209-211, 1999-02-08
Japanese Journal of Applied Physics
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詳細情報 詳細情報について
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- CRID
- 1543950420028189440
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- NII論文ID
- 110003958962
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- NII書誌ID
- AA11020413
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- 本文言語コード
- en
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- データソース種別
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- NDL-Digital
- CiNii Articles