Electron Cyclotron Resonance-Reactive Ion Beam Etching of InP by Cyclic Injection of CH4/H2/Ar and O2.

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  • Suzuki Tatsuya
    Graduate School of Engineering, Yokohama National University, 79-5 Tokiwadai, Hodogaya-ku, Yokohama 240-8501, Japan
  • Haneji Nobuo
    Graduate School of Engineering, Yokohama National University, 79-5 Tokiwadai, Hodogaya-ku, Yokohama 240-8501, Japan
  • Tada Kunio
    Graduate School of Engineering, Yokohama National University, 79-5 Tokiwadai, Hodogaya-ku, Yokohama 240-8501, Japan
  • Shimogaki Yukihiro
    Graduate School of Engineering, University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
  • Nakano Yoshiaki
    Graduate School of Engineering, University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan

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  • Electron Cyclotron Resonance-Reactive Ion Beam Etching of InP by Cyclic Injection of CH<sub>4</sub>/H<sub>2</sub>/Ar and O<sub>2</sub>

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Abstract

Electron cyclotron resonance-reactive ion beam etching (ECR-RIBE) is very useful for fabricating semiconductor photonic devices and integrated circuits (PICs). The mixture gas of CH4/H2 is used for etching InP, but carbon polymer films deposited on the surface during the etching process suppress the etching and degrade the surface quality. Thus, the polymer films must be ashed off in O2 plasma. The authors have introduced the cyclic injection of CH4/H2/Ar and O2 to ECR-RIBE and have demonstrated that it is very useful for the etching of InP. Concerning optimized etching conditions for achieving a high etching rate and smooth etched surface, it has been shown that the etching time and the ashing time should be the same in one cycle, and that the interval times should be as short as possible. Good vertical anisotropic characteristics have been achieved by cyclic etching using a three-layer resist with a Ti layer. From photoluminescence measurements, it has also been verified that this cyclic ECR-RIBE process did not cause any serious damage.

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