Effects of GaP Cap Layer Growth on Self-Assembled InAs Islands Grown on GaP (001) by Organometallic Vapor Phase Epitaxy.

• Fuchi Shingo

  Department of Materials Science and Engineering, Graduate School of Engineering, Nagoya University,<BR> Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan

• Nonogaki Youichi

  Department of Materials Science and Engineering, Graduate School of Engineering, Nagoya University,<BR> Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan

• Moriya Hiromitsu

  Department of Materials Science and Engineering, Graduate School of Engineering, Nagoya University,<BR> Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan

• Fujiwara Yasufumi

  Department of Materials Science and Engineering, Graduate School of Engineering, Nagoya University,<BR> Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan

• Takeda Yoshikazu

  Department of Materials Science and Engineering, Graduate School of Engineering, Nagoya University,<BR> Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan

Abstract

We have fabricated GaP/InAs islands/GaP structures using various growth sequences for the GaP cap layer, by low-pressure organometallic vapor phase epitaxy (LP-OMVPE). The effects of the growth sequences on the buried InAs islands and the GaP cap layers have been investigated by cross-sectional transmission electron microscopy (TEM). The two-step growth sequence is effective for the growth of GaP cap layers, whereby the first GaP layer is grown at the same temperature as InAs islands and the second GaP layer is successively grown at the optimized growth temperature of GaP. The growth sequence yields good-quality GaP/InAs islands/GaP structures with small InAs islands (15 nm in width and 5 nm in height) and a high-quality GaP cap layer. Droplet heteroepitaxy of GaP cap layers is feasible for the control of the size of buried InAs islands.

Journal

• Japanese Journal of Applied Physics

  Japanese Journal of Applied Physics 39 (6A), 3290-3293, 2000

  The Japan Society of Applied Physics

Keywords

• InAs island
• GaP
• organometallic vapor phase epitaxy
• TEM
• self-assembly
• melt-back

Details

• CRID: 1390282681230423680
• NII Article ID: 210000047303
• NII Article ID: 110004076923
• NII Article ID: 130004527449
• NII Book ID: AA10457675
• DOI: 10.1143/jjap.39.3290
• ISSN: 13474065
• ISSN: 00214922
• NDL BIB ID: 5382664
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I5382664
• Web Site: https://iopscience.iop.org/article/10.1143/JJAP.39.3290
• Web Site: https://iopscience.iop.org/article/10.1143/JJAP.39.3290/pdf
• Text Lang: en
• Data Source:
  • JaLC
  • NDL
  • Crossref
  • CiNii Articles
• Abstract License Flag: Disallowed