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- Kawamura Fumio
- Department of Electrical Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
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- Morishita Masaki
- Department of Electrical Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
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- Iwahashi Tomoya
- Department of Electrical Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
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- Yoshimura Masashi
- Department of Electrical Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
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- Mori Yusuke
- Department of Electrical Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
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- Sasaki Takatomo
- Department of Electrical Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
この論文をさがす
抄録
We grew GaN single crystals in Na-Ca flux and found that the presence of Ca in a high-temperature flux system has the following advantages for growing GaN single crystals. First, Ca in solution drastically increased the yield of GaN crystals. Second, transparent GaN single crystals are easy to grow around the gas-liquid interface. Third, the pressure required to synthesize the GaN is reduced. These effects can be interpreted as resulting from increased nitrogen solubility in the flux. In this paper, we report the effects of Ca on the yield of GaN and threshold pressure for growing GaN in Na-Ca flux.
収録刊行物
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- Japanese Journal of Applied Physics
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Japanese Journal of Applied Physics 41 (12B), L1440-L1442, 2002
The Japan Society of Applied Physics
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詳細情報 詳細情報について
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- CRID
- 1390001206254613376
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- NII論文ID
- 210000052654
- 110004080968
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- NII書誌ID
- AA10650595
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- ISSN
- 13474065
- 00214922
- http://id.crossref.org/issn/13474065
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- NDL書誌ID
- 6394957
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- 本文言語コード
- en
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- データソース種別
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- JaLC
- NDL
- Crossref
- CiNii Articles
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- 抄録ライセンスフラグ
- 使用不可