Observation of Exciton-Polariton Emissions from a ZnO Epitaxial Film on the a-Face of Sapphire Grown by Radical-Source Molecular-Beam-Epitaxy.

DOI Web Site Web Site 被引用文献2件 参考文献34件
  • Chichibu Shigefusa F.
    Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8573, Japan Photodynamics Research Center, RIKEN (Institute of Physical and Chemical Research), Aoba, Sendai, Miyagi 980-0845, Japan
  • Sota Takayuki
    Department of Electrical, Electronics, and Computer Engineering, Waseda University, 3-4-1 Ohkubo, Shinjuku, Tokyo 169-8555, Japan
  • Fons Paul J.
    Photonic Research Institute, National Institute of Advance Industrial Science & Technology (AIST), Central 2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
  • Iwata Kakuya
    Photonic Research Institute, National Institute of Advance Industrial Science & Technology (AIST), Central 2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
  • Yamada Akimasa
    Photonic Research Institute, National Institute of Advance Industrial Science & Technology (AIST), Central 2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
  • Matsubara Koji
    Photonic Research Institute, National Institute of Advance Industrial Science & Technology (AIST), Central 2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
  • Niki Shigeru
    Photonic Research Institute, National Institute of Advance Industrial Science & Technology (AIST), Central 2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan

この論文をさがす

抄録

Exciton-polariton emissions were observed at 8 K in the photoluminescence spectrum of a ZnO epitaxial film on the a-face of sapphire grown by radical-source molecular-beam-epitaxy. The resonance energies of corresponding photoreflectance structures agreed with those of longitudinal and transverse excitons, i.e. upper and lower polariton branches, where A, B and C-excitons couple simultaneously to an electromagnetic wave. In contrast to the results obtained for GaN, longitudinal-transverse splitting of the B-excitonic polariton was resolved, which is due to the large oscillator strength.

収録刊行物

被引用文献 (2)*注記

もっと見る

参考文献 (34)*注記

もっと見る

キーワード

詳細情報 詳細情報について

問題の指摘

ページトップへ