Anomalous Large Thermoelectric Power on Heavily B-Doped SiGe Thin Films with Thermal Annealing.

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  • Kawahara Toshio
    Department of Materials Science and Engineering, National Defense Academy, 1-10-20 Hashirimizu, Yokosuka 239-8686, Japan
  • Lee Sang Min
    Department of Materials Science and Engineering, National Defense Academy, 1-10-20 Hashirimizu, Yokosuka 239-8686, Japan
  • Okamoto Yoichi
    Department of Materials Science and Engineering, National Defense Academy, 1-10-20 Hashirimizu, Yokosuka 239-8686, Japan
  • Morimoto Jun
    Department of Materials Science and Engineering, National Defense Academy, 1-10-20 Hashirimizu, Yokosuka 239-8686, Japan
  • Sasaki Kimihiro
    Graduate School of Natural Science and Technology, Kanazawa University, 2-40-20 Kodatuno, Kanazawa 920-8667, Japan
  • Hata Tomonobu
    Graduate School of Natural Science and Technology, Kanazawa University, 2-40-20 Kodatuno, Kanazawa 920-8667, Japan

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The thermoelectric properties of heavily B-doped SiGe thin films were studied. The electrical resistivity in the high-temperature region was very low, which suggests the possibility of high-temperature use of heavily doped SiGe films. After thermal annealing, the low-temperature deposited samples showed collapse of the superlattice structure. As deposited condition, the samples might be in amorphous like SiGe thin films apart from good crystallinity. In these films, the anomalous large thermoelectric power was observed in the room temperature region. The power factor reached 4× 100 W/mK2 at 400 K and 1× 100 W/mK2 at 900 K.

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