Pulsed Laser Deposition of Transparent Conducting Indium Tin Oxide Films in Magnetic Field Perpendicular to Plume.

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  • Suzuki Akio
    Department of Electrical Engineering and Electronics, College of Engineering, Osaka Sangyo University, 3-1-1 Nakagaito, Daito, Osaka 574-0013, Japan
  • Matsushita Tatsuhiko
    Department of Electrical Engineering and Electronics, College of Engineering, Osaka Sangyo University, 3-1-1 Nakagaito, Daito, Osaka 574-0013, Japan
  • Aoki Takanori
    Department of Electrical Engineering and Electronics, College of Engineering, Osaka Sangyo University, 3-1-1 Nakagaito, Daito, Osaka 574-0013, Japan
  • Yoneyama Yoshitaka
    Department of Electrical Engineering and Electronics, College of Engineering, Osaka Sangyo University, 3-1-1 Nakagaito, Daito, Osaka 574-0013, Japan
  • Okuda Masahiro
    Department of Physics and Electronics, College of Engineering, Osaka Prefecture University, 1-1 Gakuen-cho, Sakai, Osaka 593-8231, Japan

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In2O3 doped with 5 wt% SnO2 (indium-tin oxide(ITO)(5 wt%)) films have been deposited on glass and quartz substrates in a magnetic field generated from three pieces of rare-earth permanent magnets (1.25 T flux density) placed at every 120º angle to surround the plume produced by pulsed laser deposition using an ArF laser (λ=193 nm). In all experiments, a repetition rate of 10 Hz, an energy density of 1.5 J/cm2, and an irradiation time of 20-30 min (12000-18000 shots) were used. The lowest resistivity of 7.2×10-5 Ω·cm and an optical transmittance of more than 90% in the visible region of the spectrum were obtained for approximately 30-nm-thick ITO (5 wt%) films deposited at a substrate temperature of 300ºC in oxygen with a flow rate of 2 sccm. Very smooth surfaces with an average surface roughness of 0.61 nm were observed by scanning electron microscope (SEM) and atomic force microscope (AFM).

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