High-Power and Long-Lifetime InGaN Multi-Quantum-Well Laser Diodes Grown on Low-Dislocation-Density GaN Substrates.

• Nagahama Shin-ichi

  Department of Research and Development, Nichia Chemical Industries, Ltd., 491 Oka, Kaminaka, Anan, Tokushima 774-8601, Japan

• Iwasa Naruhito

  Department of Research and Development, Nichia Chemical Industries, Ltd., 491 Oka, Kaminaka, Anan, Tokushima 774-8601, Japan

• Senoh Masayuki

  Department of Research and Development, Nichia Chemical Industries, Ltd., 491 Oka, Kaminaka, Anan, Tokushima 774-8601, Japan

• Matsushita Toshio

  Department of Research and Development, Nichia Chemical Industries, Ltd., 491 Oka, Kaminaka, Anan, Tokushima 774-8601, Japan

• Sugimoto Yasunobu

  Department of Research and Development, Nichia Chemical Industries, Ltd., 491 Oka, Kaminaka, Anan, Tokushima 774-8601, Japan

• Kiyoku Hiroyuki

  Department of Research and Development, Nichia Chemical Industries, Ltd., 491 Oka, Kaminaka, Anan, Tokushima 774-8601, Japan

• Kozaki Tokuya

  Department of Research and Development, Nichia Chemical Industries, Ltd., 491 Oka, Kaminaka, Anan, Tokushima 774-8601, Japan

• Sano Masahiko

  Department of Research and Development, Nichia Chemical Industries, Ltd., 491 Oka, Kaminaka, Anan, Tokushima 774-8601, Japan

• Matsumura Hiroaki

  Department of Research and Development, Nichia Chemical Industries, Ltd., 491 Oka, Kaminaka, Anan, Tokushima 774-8601, Japan

• Umemoto Hitoshi

  Department of Research and Development, Nichia Chemical Industries, Ltd., 491 Oka, Kaminaka, Anan, Tokushima 774-8601, Japan

• Chocho Kazuyuki

  Department of Research and Development, Nichia Chemical Industries, Ltd., 491 Oka, Kaminaka, Anan, Tokushima 774-8601, Japan

• Mukai Takashi

  Department of Research and Development, Nichia Chemical Industries, Ltd., 491 Oka, Kaminaka, Anan, Tokushima 774-8601, Japan

抄録

Epitaxially laterally overgrown GaN on free-standing GaN was used to reduce the threading dislocations which were widely scattered over the entire surface. The threading dislocation density of the GaN layer above the window area surrounding the SiO₂ mask was reduced to 5× 10⁷/cm², and that of the GaN layer above the SiO₂ mask area was reduced to 7× 10⁵/cm². InGaN multi-quantum-well laser diodes (LDs) grown on low-dislocation-density GaN substrates were demonstrated. LDs with an output power of 30 mW exhibited an estimated lifetime of 15,000 h at a case temperature of 60°C. At a case temperature of 25°C, the current at the output power of 30 mW and at the lasing threshold current were 42 mA and 23 mA, respectively. For comparison, LDs were grown on different substrates, and the dependence of their characteristics on the substrates was examined.

収録刊行物

• Japanese Journal of Applied Physics

  Japanese Journal of Applied Physics 39 (7A), L647-L650, 2000

  The Japan Society of Applied Physics

キーワード

• InGaN
• quantum well
• laser
• lateral overgrowth
• GaN substrate
• lifetime

詳細情報

• CRID: 1390282681230619776
• NII論文ID: 110004093358
• NII論文ID: 210000048563
• NII論文ID: 130004527511
• NII書誌ID: AA10650595
• DOI: 10.1143/jjap.39.l647
• COI: 1:CAS:528:DC%2BD3cXkvVynt7o%3D
• ISSN: 13474065
• ISSN: 00214922
• ISSN: http://id.crossref.org/issn/13474065
• ISSN: http://id.crossref.org/issn/00214922
• NDL書誌ID: 5453380
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I5453380
• Web Site: https://iopscience.iop.org/article/10.1143/JJAP.39.L647
• Web Site: https://iopscience.iop.org/article/10.1143/JJAP.39.L647/pdf
• 本文言語コード: en
• データソース種別:
  • JaLC
  • NDL
  • Crossref
  • CiNii Articles
• 抄録ライセンスフラグ: 使用不可