Room Temperature 1.6 μm Electroluminescence from a Si-Based Light Emitting Diode with β-FeSi2 Active Region

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  • Suemasu Takashi
    Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennohdai, Tsukuba, Ibaraki 305-8573, Japan
  • Negishi Yoichiro
    Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennohdai, Tsukuba, Ibaraki 305-8573, Japan
  • Takakura Ken’ichiro
    Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennohdai, Tsukuba, Ibaraki 305-8573, Japan
  • Hasegawa Fumio
    Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennohdai, Tsukuba, Ibaraki 305-8573, Japan

書誌事項

タイトル別名
  • Room Temperature 1.6 .MU.m Electroluminescence from a Si-Based Light Emitting Diode with .BETA.-FeSi2 Active Region.
  • Room Temperature 1 6 マイクロm Electroluminescence from a Si Based Light Emitting Diode with ベータ FeSi2 Active Region
  • Room Temperature 1.6 µm Electroluminescence from a Si-Based Light Emitting Diode with β-FeSi<sub>2</sub> Active Region

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抄録

Room temperature electroluminescence (EL) was obtained for the first time from a Si-based light emitting diode with semiconducting silicide (β-FeSi2) active region. The peak wavelength was 1.6 μm and it is from β-FeSi2 balls embedded in a Si p-n junction. An a-axis oriented β-FeSi2 layer was grown on n+-(001) Si by reaction deposition epitaxy (RDE), then p- and p+-Si layers were grown by molecular beam epitaxy (MBE). The β-FeSi2 aggregated into balls with about 100 nm diameter in this process. The EL intensity increased superlinearly with increase of the injected current density, and reasonable EL was obtained at current density above 10 A/cm2, though the photoluminescence (PL) was difficult to be detected at room temperature.

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