The Integration of In<sub>x</sub>Ga<sub>1-x</sub>N Multiple-Quantum-Well Laser Diodes with Copper Substrates by Laser Lift-Off
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- Wong William S.
- XEROX Palo Alto Research Center, Electronic Materials Laboratory, 3333 Coyote Hill Road, Palo Alto, CA 94304, U.S.A.
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- Kneissl Michael
- XEROX Palo Alto Research Center, Electronic Materials Laboratory, 3333 Coyote Hill Road, Palo Alto, CA 94304, U.S.A.
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- Mei Ping
- XEROX Palo Alto Research Center, Electronic Materials Laboratory, 3333 Coyote Hill Road, Palo Alto, CA 94304, U.S.A.
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- Treat David W.
- XEROX Palo Alto Research Center, Electronic Materials Laboratory, 3333 Coyote Hill Road, Palo Alto, CA 94304, U.S.A.
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- Teepe Mark
- XEROX Palo Alto Research Center, Electronic Materials Laboratory, 3333 Coyote Hill Road, Palo Alto, CA 94304, U.S.A.
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- Johnson Noble M.
- XEROX Palo Alto Research Center, Electronic Materials Laboratory, 3333 Coyote Hill Road, Palo Alto, CA 94304, U.S.A.
書誌事項
- タイトル別名
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- The Integration of InxGa1-xN Multiple-Quantum-Well Laser Diodes with Copper Substrates by Laser Lift-Off.
- Integration of InxGa1 xN Multiple Quantum Well Laser Diodes with Copper Substrates by Laser Lift Off
この論文をさがす
抄録
Indium-gallium nitride (InGaN) multiple-quantum-well ridge-waveguide laser diodes (LDs) grown by metalorganic chemical vapor deposition on sapphire substrates were successfully transferred onto Cu substrates using a laser lift-off (LLO) process. Characterization of the InGaN LDs before and after the sapphire substrate removal revealed no measurable degradation in device performance. The threshold current, under pulsed operation, for a 3 μm ridge-waveguide device and the laser-emission spectrum remained essentially unchanged after the LLO process. In addition, the conductive Cu substrate permitted realization of LDs with vertical-current injection using the Cu as the backside contact.
収録刊行物
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- Japanese Journal of Applied Physics
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Japanese Journal of Applied Physics 39 (12A), L1203-L1205, 2000
The Japan Society of Applied Physics
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詳細情報
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- CRID
- 1390282681228985088
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- NII論文ID
- 210000048336
- 110004093482
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- NII書誌ID
- AA10650595
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- ISSN
- 13474065
- 00214922
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- NDL書誌ID
- 5643578
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- 本文言語コード
- en
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- データソース種別
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- JaLC
- NDL
- Crossref
- CiNii Articles
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- 抄録ライセンスフラグ
- 使用不可