The Integration of In<sub>x</sub>Ga<sub>1-x</sub>N Multiple-Quantum-Well Laser Diodes with Copper Substrates by Laser Lift-Off

  • Wong William S.
    XEROX Palo Alto Research Center, Electronic Materials Laboratory, 3333 Coyote Hill Road, Palo Alto, CA 94304, U.S.A.
  • Kneissl Michael
    XEROX Palo Alto Research Center, Electronic Materials Laboratory, 3333 Coyote Hill Road, Palo Alto, CA 94304, U.S.A.
  • Mei Ping
    XEROX Palo Alto Research Center, Electronic Materials Laboratory, 3333 Coyote Hill Road, Palo Alto, CA 94304, U.S.A.
  • Treat David W.
    XEROX Palo Alto Research Center, Electronic Materials Laboratory, 3333 Coyote Hill Road, Palo Alto, CA 94304, U.S.A.
  • Teepe Mark
    XEROX Palo Alto Research Center, Electronic Materials Laboratory, 3333 Coyote Hill Road, Palo Alto, CA 94304, U.S.A.
  • Johnson Noble M.
    XEROX Palo Alto Research Center, Electronic Materials Laboratory, 3333 Coyote Hill Road, Palo Alto, CA 94304, U.S.A.

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タイトル別名
  • The Integration of InxGa1-xN Multiple-Quantum-Well Laser Diodes with Copper Substrates by Laser Lift-Off.
  • Integration of InxGa1 xN Multiple Quantum Well Laser Diodes with Copper Substrates by Laser Lift Off

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抄録

Indium-gallium nitride (InGaN) multiple-quantum-well ridge-waveguide laser diodes (LDs) grown by metalorganic chemical vapor deposition on sapphire substrates were successfully transferred onto Cu substrates using a laser lift-off (LLO) process. Characterization of the InGaN LDs before and after the sapphire substrate removal revealed no measurable degradation in device performance. The threshold current, under pulsed operation, for a 3 μm ridge-waveguide device and the laser-emission spectrum remained essentially unchanged after the LLO process. In addition, the conductive Cu substrate permitted realization of LDs with vertical-current injection using the Cu as the backside contact.

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