Theoretical Studies on the Dielectric Breakdown of the SiO_2 Thin Films

• Ayumi YOKOZAWA

• Noriko OHTA

• Yuji MOCHIZUKI

• Akihiko ISHITANI

• Toshikazu TAKADA

抄録

Electronic structures of oxygen deficiency in the SiO_2 thin film are theoretically studied by using the cluster models of Si_2O_7H_6 and Si_2O_6H_6 in order to reveal the mechanism of dielectric breakdown observed in the thin films. It is found that the oxygen deficiency induces electron traps rather than hole traps. Furthermore, F^- ions captured through the HF treatments are considered to be a key to introduce the oxygen deficiency in the SiO_2 thin films.

収録刊行物

• 東北大学研究所報告. A集, 物理学・化学・冶金学 = Science reports of the Research Institutes, Tohoku University. Ser. A, Physics, chemistry and metallurgy

  東北大学研究所報告. A集, 物理学・化学・冶金学 = Science reports of the Research Institutes, Tohoku University. Ser. A, Physics, chemistry and metallurgy 39 (1), 81-84, 1994-03-25

  Tohoku University

キーワード

• SiO_2 thin film
• dielectric breakdown
• oxygen deficiency
• electron trap
• ab initio molecular orbital calculation

詳細情報

• CRID: 1573668926744891264
• NII論文ID: 110004640475
• NII書誌ID: AA00836167
• ISSN: 00408808
• Web Site: http://hdl.handle.net/10097/28478
• 本文言語コード: en
• データソース種別:
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