Pressure-Induced Zero-Gap Semiconducting State in Organic Conductor α-(BEDT-TTF)₂I₃Salt

• Katayama Shinya

  Department of Physics, Nagoya University

• Kobayashi Akito

  Department of Physics, Nagoya University

• Suzumura Yoshikazu

  Department of Physics, Nagoya University

書誌事項

タイトル別名

• Pressure-Induced Zero-Gap Semiconducting State in Organic Conductor α-(BEDT-TTF)2I3 Salt
• Pressure Induced Zero Gap Semiconducting State in Organic Conductor アルファ BEDT TTF 2I3 Salt

抄録

We show a zero-gap semiconducting (ZGS) state in the quasi-two-dimensional organic conductor α-(BEDT-TTF)₂I₃ salt, which emerges under uniaxial pressure along the a-axis (the stacking axis of the BEDT-TTF molecule). The ZGS state is the state in which a Dirac cone with the band spectrum of a linear dispersion exists around the Fermi point connecting an unoccupied (electron) band with an occupied (hole) band. The spectrum exhibits a large anisotropy in velocity, which depends on the direction from the Fermi point. By varying the magnitude of several transfer energies of a tight-binding model with four sites per unit cell, it is shown that the ZGS state exists in a wide pressure range, and is attributable to the large anisotropy of the transfer energies along the stacking axis.

収録刊行物

• Ｊｏｕｒｎａｌ　ｏｆ　ｔｈｅ　Ｐｈｙｓｉｃａｌ　Ｓｏｃｉｅｔｙ　ｏｆ　Ｊａｐａｎ

  Ｊｏｕｒｎａｌ　ｏｆ　ｔｈｅ　Ｐｈｙｓｉｃａｌ　Ｓｏｃｉｅｔｙ　ｏｆ　Ｊａｐａｎ 75 (5), 054705-, 2006

  一般社団法人 日本物理学会

キーワード

• organic conductor
• BEDT-TTF
• quarter-filling
• tight-binding model
• zero-gap semiconductor
• Dirac cone
• contact point
• α-(BEDT-TTF)<SUB>2</SUB>I<SUB>3</SUB>

詳細情報

• CRID: 1390282679167063808
• NII論文ID: 210000106155
• NII論文ID: 110004702333
• NII書誌ID: AA00704814
• DOI: 10.1143/jpsj.75.054705
• ISSN: 13474073
• ISSN: 00319015
• NDL書誌ID: 7908360
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I7908360
• Web Site: http://journals.jps.jp/doi/pdf/10.1143/JPSJ.75.054705
• 本文言語コード: en
• データソース種別:
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  • NDL
  • Crossref
  • CiNii Articles
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