酸素雰囲気アニール中のHfO_2/SiO_2/Si(001)界面反応の高分解能RBS観察  [in Japanese] Interfacial reaction in HfO_2/SiO_2/Si(001) during O_2 anneal observed by high-resolution RBS  [in Japanese]

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Author(s)

Abstract

Si(001)上に約4nmのHfO_2を成長させた試料(SiO_2界面層0.7nm)を0.1 Torrの酸素雰囲気中でアニール(500-900℃)し,高分解能RBS分析を行った.アニールによって,界面層の増膜とともに新たに界面で酸化されたSi数の20-30%に相当する量のSiが表面に移動した.また膜中での酸素の移動を調べるため,同位体酸素(質量数18)中でアニール(900℃, 20分)を行った.^<18>OはHfO_2膜中に一様に分布していたが,SiO_2界面層中では一部の浅い領域だけに分布しており,アニールによって新たに形成されたSiO_2界面層にはほとんど分布していなかった.

HfO_2/SiO_2/Si(001) structures were annealed in dry oxygen, and compositional depth profiles were measured by high-resolution Rutherford backscattering spectroscopy. Growth of the interfacial SiO_2 layer and simultaneous surface accumulation of Si were observed. The observed result indicates that silicon species are emitted from the SiO_2/Si interface to release the stress induced by oxidation as was predicted by recent theoretical studies.

Journal

  • IEICE technical report

    IEICE technical report 106(108), 99-102, 2006-06-14

    The Institute of Electronics, Information and Communication Engineers

References:  9

Codes

  • NII Article ID (NAID)
    110004757009
  • NII NACSIS-CAT ID (NCID)
    AN10013254
  • Text Lang
    JPN
  • Article Type
    ART
  • ISSN
    09135685
  • NDL Article ID
    7976384
  • NDL Source Classification
    ZN33(科学技術--電気工学・電気機械工業--電子工学・電気通信)
  • NDL Call No.
    Z16-940
  • Data Source
    CJP  NDL  NII-ELS 
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