Shifting Donor–Acceptor Photoluminescence in N-doped ZnO

• Makino Takayuki

  Department of Material Science, University of Hyogo RIKEN (Institute of Physical and Chemical Research)

• Tsukazaki Atsushi

  Institute for Materials Research, Tohoku University

• Ohtomo Akira

  Institute for Materials Research, Tohoku University

• Kawasaki M.

  Institute for Materials Research, Tohoku University

• Koinuma Hideomi

  Graduate School of Frontier Science, The University of Tokyo

Abstract

We have grown nitrogen-doped ZnO films by two kinds of epitaxial methods on lattice-matched ScAlMgO₄ substrates. We measured the photoluminescence (PL) of the two kinds of ZnO:N layers in the donor–acceptor-pair transition region. The analysis of the excitation-intensity dependence of the PL peak shift with a fluctuation model has proven that our observed growth-technique dependence can be explained in terms of the inhomogeneity of charged impurity distribution. It was found that the inhomogeneity in the sample prepared with the process that provides showing better electrical properties was significantly smaller in spite of the similar nitrogen concentration. The activation energy of acceptors has been evaluated to be ≈170 meV, which is independent of the nitrogen concentration.

Journal

• Journal of the Physical Society of Japan

  Journal of the Physical Society of Japan 75 (7), 073701-, 2006

  THE PHYSICAL SOCIETY OF JAPAN

Keywords

• doping
• zinc oxide
• donors
• acceptors
• photoluminescence
• fluctuation

Details

• CRID: 1390001204189524992
• NII Article ID: 110004777961
• NII Article ID: 210000106214
• NII Book ID: AA00704814
• DOI: 10.1143/jpsj.75.073701
• BIBCODE: 2006JPSJ...75g3701M
• ISSN: 13474073
• ISSN: 00319015
• NDL BIB ID: 7973637
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I7973637
• Web Site: https://journals.jps.jp/doi/pdf/10.1143/JPSJ.75.073701
• Text Lang: en
• Data Source:
  • JaLC
  • NDL
  • Crossref
  • CiNii Articles
• Abstract License Flag: Disallowed