Oxygen Pipe Diffusion in Sapphire Basal Dislocation

• NAKAGAWA Tsubasa

  Department of Materials Engineering, School of Engineering, The University of Tokyo

• NAKAMURA Atsutomo

  Department of Intelligent Materials Engineering, School of Engineering, Osaka City University

• SAKAGUCHI Isao

  National Institute for Materials Science

• SHIBATA Naoya

  Institute of Engineering Innovation, The University of Tokyo

• LAGERLÖF K. Peter. D.

  Department of Materials Science and Engineering, Case Western Reserve University

• YAMAMOTO Takahisa

  Department of Advanced Materials Science, Graduate School of Frontier Science, The University of Tokyo

• HANEDA Hajime

  National Institute for Materials Science

• IKUHARA Yuichi

  Institute of Engineering Innovation, The University of Tokyo

Bibliographic Information

Other Title

• Oxygen Pipe Diffusion in Sapphire Basal Disocation

Abstract

The oxygen self-diffusion behavior in deformed sapphire single crystals (α-Al₂O₃ sapphire) with a high density of unidirectional basal dislocations was examined in the temperature range of 1424-1636°C using ¹⁸O isotopes and secondary ion mass spectrometry-depth profiling techniques. The pipe and lattice diffusion kinetics were best described by r²D_p=4.6×10^-20 exp (-4.8[eV]/kT) [m⁴/s] and D_l=2.9×10^-1 exp (-5.5[eV]/kT) [m²/s], respectively. Both the magnitude of pre-exponential factor and activation energy for oxygen pipe diffusion were in good agreement with that of indirect measurements of pipe diffusion deduced from the annihilation of dislocation dipoles. The measured bulk diffusion coefficient is also in good agreement with previously reported data having activation energies ranged between 5.5-6.1 eV.<br>

Journal

• Journal of the Ceramic Society of Japan

  Journal of the Ceramic Society of Japan 114 (1335), 1013-1017, 2006

  The Ceramic Society of Japan

Keywords

• Dislocation
• Sapphire
• Pipe diffusion
• Grain boundary diffusion
• SIMS

Details

• CRID: 1390001205279132928
• NII Article ID: 110004837134
• NII Book ID: AN10040326
• DOI: 10.2109/jcersj.114.1013
• ISSN: 18821022
• ISSN: 09145400
• NDL BIB ID: 8567542
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I8567542
• Web Site: http://www.jstage.jst.go.jp/article/jcersj/114/1335/114_1335_1013/_pdf
• Text Lang: en
• Data Source:
  • JaLC
  • NDL
  • Crossref
  • CiNii Articles
• Abstract License Flag: Disallowed