低気圧誘導結合型プラズマによる半導体製造装置排ガスCF_4の分解 : 運転条件の最適化と反応生成物の分析  [in Japanese] Decomposition of CF_4 Exhaust Gas from Semiconductor Manufacturing Equipments Using Low Pressure Inductively Coupled Plasma : Optimization of Operating Conditions and Byproduct Analysis  [in Japanese]

Search this Article

Author(s)

Abstract

Perfluorocarbons (PFCs) and hydrofluorocarbons (HFCs), are being regulated internationally because their gases cause green effect and their global warming potential (GWP) are several thousands times higher compared with that of CO_2. PFC is used as wafer etching and clean-up agent of chemical vapor deposition (CVD) chambers. CF_4 is one of the most stable gas among PFCs and their decomposition is extremely difficult. Low pressure (〜80Pa) inductive coupled plasma (ICP) reactor was used to investigate the CF_4 decomposition. The reason we took this approach was to utilize the ICP power supply for generating remote plasma in both wafer etching process and chamber cleaning at the same time. When the total flow rate was below 0.189L/min, the complete CF_4 decomposition was achieved for a given power (1.2kW). The optimum O_2 addition was in the range of 1.0〜1.45 stoichiometric ratio of CF_4. Argon addition enhanced the CF_4 decomposition significantly. But, helium addition was insignificant.

Journal

  • Transactions of the Japan Society of Mechanical Engineers. Series B.

    Transactions of the Japan Society of Mechanical Engineers. Series B. 70(692), 1058-1063, 2004-04-25

    The Japan Society of Mechanical Engineers

References:  16

Cited by:  7

Codes

  • NII Article ID (NAID)
    110004999409
  • NII NACSIS-CAT ID (NCID)
    AN00187441
  • Text Lang
    JPN
  • Article Type
    Journal Article
  • ISSN
    03875016
  • NDL Article ID
    6934187
  • NDL Source Classification
    ZN11(科学技術--機械工学・工業)
  • NDL Call No.
    Z16-109
  • Data Source
    CJP  CJPref  NDL  NII-ELS 
Page Top