Analysis of Lattice Distortion under Si Crystal Surface by X-ray Topography

• 麻生, 貴之

• 福森, 太一郎

• Kuroki, Masako

• Akashi, Yoshito

• Futagami, Koji

• Aso, Takayuki

• Fukumori, Taichiro

Bibliographic Information

Other Title

• X線トポグラフィによるSi結晶表面下の格子歪の解析
• Xセン トポグラフィ ニ ヨル Si ケッショウ ヒョウメン カ ノ コウシ ヒズミ ノ カイセキ

Abstract

Abstract The X-ray reflection topography under simultaneously stimulated total reflection is applied to analyze the lattice distortion just beneath the Si surface. Contrast change of the lattice distortion caused by the heat-treatment at the edge of the nitrogen ion implanted region silicon was evaluated contrast change from a systematic topographs taken at angles around the Bragg diffraction.The lattice distortion generated by annealing at the edge of the oxide film is also evaluated. The ratio of the contrast at the edge of implanted region over the averaged intensity of specimen is evaluated by transparented light intensity of films.And these ratios in a systematic topographs around the Bragg diffraction are plotted against the angles at which the topographs are taken. From this plot the difference in diffraction angle between average diffraction and edge contrast is obtained as 20" at the inner region and 15" at the outer region.

Journal

• Memoirs of Faculty of Engineering, University of Miyazaki

  Memoirs of Faculty of Engineering, University of Miyazaki 35 31-35, 2006-08-30

  宮崎大学工学部

Keywords

• X-ray reflection topography, Lattice distortion, Total reflection, Silicon, Annealing

Details

• CRID: 1050851739699224576
• NII Article ID: 110005001878
• NII Book ID: AA00732558
• ISSN: 05404924
• HANDLE: 10458/409
• NDL BIB ID: 8567729
• Web Site: https://miyazaki-u.repo.nii.ac.jp/records/2440
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I8567729
• Text Lang: ja
• Article Type: departmental bulletin paper
• Data Source:
  • IRDB
  • NDL
  • CiNii Articles