Crystal Structure of Epitaxial Co Thin Film Grown on Al_2O_3(0001) Substrate

• OHTAKE Mitsuru

  Faculty of Science and Engineering, Chuo University

• AKITA Yuta

  Faculty of Science and Engineering, Chuo University

• KIRINO Fumiyoshi

  Graduate School of Fine Arts, Tokyo National University of Fine Arts and Music

• FUTAMOTO Masaaki

  Faculty of Science and Engineering, Chuo University

抄録

The effects of substrate temperature and buffer layer material on the crystal structure of Co thin film epitaxially grown on Al_2O_3(0001) substrate were investigated. The substrate temperature was varied in a range between 30℃ and 400℃. Co films grown directly on Al_2O_3(0001) substrates consist of a mixture of fcc and hcp phases with stacking faults. An fcc-Co single crystal film was obtained when a Cu buffer layer was introduced, while on an Au buffer layer an hcp-Co single crystal film grew at a substrate temperature of 300℃.

収録刊行物

• 電子情報通信学会技術研究報告. MR, 磁気記録

  電子情報通信学会技術研究報告. MR, 磁気記録 106 (335), 47-48, 2006-11-02

  一般社団法人電子情報通信学会

キーワード

• Co thin film
• crystal structure
• epitaxial growth
• buffer layer
• Al_2O_3(0001) substrate

詳細情報

• CRID: 1572543026695046400
• NII論文ID: 110005717312
• NII書誌ID: AN10013050
• 本文言語コード: en
• データソース種別:
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