Specific Heat and de Haas–van Alphen Experiments on the Heavy-Fermion Superconductor CePt<SUB>3</SUB>Si

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  • Specific Heat and de Haas-van Alphen Experiments on the Heavy-Fermion Superconductor CePt3Si

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Abstract

Specific heat and de Haas–van Alphen (dHvA) measurements were performed on a high-quality single crystal of CePt3Si without inversion symmetry in the tetragonal crystal structure. We observed distinct peaks in the specific heat C at the superconducting transition temperature Tc=0.46 K and the antiferromagnetic ordering temperature TN=2.25 K, compared to the previous data, indicating an improvement of the sample quality. The temperature dependence of the electronic specific heat coefficient Ce⁄T below about 0.3 K is well described by the equation of Ce⁄T=γs+βsT with γs=34.1 mJ/(K2·mol) and βs=1290 mJ/(K3·mol), evidencing the existence of line nodes in the superconducting energy gap. Furthermore, the electronic specific heat coefficient γs in the superconducting state indicates a nonlinear magnetic field dependence γs(H)∝\\sqrtH, which also supports the presence of line nodes. We did not observe a discontinuous change of the Fermi surface at PAF=0.6 GPa where the Néel temperature becomes zero, but observed a new dHvA branch above 1.5 GPa of which the cyclotron effective mass decreased steeply as a function of pressure from 19m0 at 2.0 GPa to 11m0 at 2.7 GPa.

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