Online Measurement Technique for Diameter Profile of Si Crystal in Growth Furnace of Czochralski Method
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- TAKANASHI Keiichi
- Department of System Engineering, Okayama Prefectural University
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- SUEOKA Koji
- 岡山県立大学情報工学部
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- FUKUTANI Seishiro
- 岡山県立大学情報工学部
Bibliographic Information
- Other Title
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- チョクラルスキー法による単結晶Si引上炉における単結晶断面形状のオンライン測定技術の開発
- チョクラルスキーホウ ニ ヨル タンケッショウ Si ヒキアゲロ ニ オケル タンケッショウ ダンメン ケイジョウ ノ オンライン ソクテイ ギジュツ ノ カイハツ
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Abstract
We have developed a new instrumentation technique for Si crystal growth process of Czochralski (CZ) method for the purpose of the productivity improvement. In this paper, we developed the online measurement technique for diameter profile of Si crystal in growth furnace. Our new technique can measure the crystal diameter profile with higher accuracy than conventional optical measurement. The features of this technique are the data correction method and the elimination method of the effect of crystal swing. The measurement error of maximum diameter is within 0.18mm, and the measurement error of minimum diameter is within 0.09mm. This technique contributes to the improvement of CZ Si crystal productivity.
Journal
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- TRANSACTIONS OF THE JAPAN SOCIETY OF MECHANICAL ENGINEERS Series C
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TRANSACTIONS OF THE JAPAN SOCIETY OF MECHANICAL ENGINEERS Series C 73 (727), 649-654, 2007
The Japan Society of Mechanical Engineers
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Details 詳細情報について
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- CRID
- 1390001206386178688
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- NII Article ID
- 130004084930
- 110006271381
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- NII Book ID
- AN00187463
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- COI
- 1:CAS:528:DC%2BD2sXlslCitrY%3D
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- ISSN
- 18848354
- 03875024
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- NDL BIB ID
- 8757547
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- Text Lang
- ja
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- Data Source
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- JaLC
- NDL
- Crossref
- CiNii Articles
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- Abstract License Flag
- Disallowed