先端放電型マイクロ波プラズマCVDによる単層カーボンナノチューブ配向成長  [in Japanese] Synthesis of Aligned Single-Walled Carbon Nanotubes by Point-Arc Microwave Plasma Chemical Vapor Deposition  [in Japanese]

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Author(s)

Abstract

It is very important to control the growth orientation of carbon nanotubes (CNTs) on substrates for applications such as field emission devices and CNT-based FETs. Although chemical vapor deposition (CVD) is the most reliable means to this end, there have been few reports on the synthesis of vertically aligned single-walled carbon nanotubes (SWNTs) using the CVD method. In this study, we demonstrate the low temperature synthesis of extremelydense and vertically aligned SWNTs deposited by point-arc microwave plasma CVD.

Journal

  • Journal of Plasma and Fusion Research

    Journal of Plasma and Fusion Research 81(9), 665-668, 2005-09-25

    The Japan Society of Plasma Science and Nuclear Fusion Research

References:  19

Codes

  • NII Article ID (NAID)
    110006281970
  • NII NACSIS-CAT ID (NCID)
    AN10401672
  • Text Lang
    JPN
  • Article Type
    REV
  • ISSN
    09187928
  • NDL Article ID
    7678040
  • NDL Source Classification
    ZM35(科学技術--物理学)
  • NDL Call No.
    Z15-8
  • Data Source
    CJP  NDL  NII-ELS  J-STAGE  NDL-Digital 
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