Fabrication and Optical Characterization of Five-Layer Asymmetric Coupled Quantum Well (FACQW).

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  • Suzuki Tatsuya
    Department of Electrical and Computer Engineering, Graduate School of Engineering, Yokohama National University, 79-5 Tokiwadai, Hodogaya-ku, Yokohama 240-8501, Japan
  • Noh Joo-Hyong
    Department of Electrical and Computer Engineering, Graduate School of Engineering, Yokohama National University, 79-5 Tokiwadai, Hodogaya-ku, Yokohama 240-8501, Japan
  • Arakawa Taro
    Department of Electrical and Computer Engineering, Graduate School of Engineering, Yokohama National University, 79-5 Tokiwadai, Hodogaya-ku, Yokohama 240-8501, Japan
  • Tada Kunio
    Department of Electrical and Computer Engineering, Graduate School of Engineering, Yokohama National University, 79-5 Tokiwadai, Hodogaya-ku, Yokohama 240-8501, Japan
  • Okamiya Yuuki
    Department of Electrical and Computer Engineering, Graduate School of Engineering, Yokohama National University, 79-5 Tokiwadai, Hodogaya-ku, Yokohama 240-8501, Japan
  • Miyagi Yoshitomo
    Department of Electrical and Computer Engineering, Graduate School of Engineering, Yokohama National University, 79-5 Tokiwadai, Hodogaya-ku, Yokohama 240-8501, Japan
  • Sakai Nobuaki
    Department of Electrical and Computer Engineering, Graduate School of Engineering, Yokohama National University, 79-5 Tokiwadai, Hodogaya-ku, Yokohama 240-8501, Japan
  • Haneji Nobuo
    Department of Electrical and Computer Engineering, Graduate School of Engineering, Yokohama National University, 79-5 Tokiwadai, Hodogaya-ku, Yokohama 240-8501, Japan

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Abstract

The five-layer asymmetric coupled quantum well (FACQW) is a new potential-tailored quantum well (QW) that is promising for ultrafast and ultralow-voltage optical modulators and switches. We succeeded in fabricating GaAs/AlGaAs FACQW with monolayer accuracy by the molecular beam epitaxy (MBE) method by monitoring reflection high-energy electron diffraction (RHEED) specular beam intensity oscillation. Photoabsorption current measurements of the FACQW sample showed good agreement with theoretical results, and a potential for much lower voltage operation. In addition, we studied the growth sequences of GaAs/AlGaAs QWs in the migration-enhanced epitaxy (MEE) method in order to fabricate the FACQW with steeper and flatter heterointerfaces. The sequence of supplying materials for Al0.3Ga0.7As growth, on which there is no report, was modified and optimized, and the QWs of higher quality were obtained at a growth temperature of 490°C using the optimized sequence. The results of photoluminescence measurements show that the MEE method modified as mentioned above is a promising growth technique for the fabrication of FACQWs of higher quality.

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