Effect of Strain in Epitaxially Grown SrRuO₃Thin Films on Crystal Structure and Electric Properties

• Takahashi Kenji

  Department of Innovative and Engineered Materials, Tokyo Institute of Technology, G1-405, 4259 Nagatsuta-cho, Midori-ku, Yokohama 226-8502, Japan

• Oikawa Takahiro

  Department of Innovative and Engineered Materials, Tokyo Institute of Technology, G1-405, 4259 Nagatsuta-cho, Midori-ku, Yokohama 226-8502, Japan

• Saito Keisuke

  Application Laboratory, Analytical Division, Philips Japan, Ltd., 35-1, Sagamiono 7-chome, Sagamihara, Kanagawa 228-8505, Japan

• Kaneko Satoru

  Kanagawa Industrial Technology Research Institute, 705-1 Shimoimaizumi, Ebina, Kanagawa 243-0435, Japan

• Fujisawa Hironori

  Department of Electrical, Electronic and Computer Engineering, Graduate School of Engineering, Himeji Institute of Technology, 2167 Shosha, Himeji, Hyogo 671-2201, Japan

• Shimizu Masaru

  Department of Electrical, Electronic and Computer Engineering, Graduate School of Engineering, Himeji Institute of Technology, 2167 Shosha, Himeji, Hyogo 671-2201, Japan

• Funakubo Hiroshi

  Department of Innovative and Engineered Materials, Tokyo Institute of Technology, G1-405, 4259 Nagatsuta-cho, Midori-ku, Yokohama 226-8502, Japan

書誌事項

タイトル別名

• Effect of Strain in Epitaxially Grown SrRuO3 Thin Films on Crystal Structure and Electric Properties.

抄録

SrRuO₃ thin films were epitaxially grown on (001)SrTiO₃ and (001) [(LaAlO₃)_0.3-(SrAl_0.5Ta_0.5O₃)_0.7] (LSAT) substrates by rf magnetron sputter deposition and metalorganic chemical vapor deposition (MOCVD), and their crystal structure, electric property and thermal stability were investigated. SrRuO₃ films prepared by MOCVD (MOCVD-SrRuO₃ films) had almost the same volume of unit cell as that of the single crystal, while those prepared by rf magnetron sputter deposition (sputter-SrRuO₃ films) had a larger volume. This large volume of the unit cell of sputter-SrRuO₃ films decreased by the post annealing up to 830°C but did not reach that of the single crystal one. Temperature dependence of the resistivity of MOCVD-SrRuO₃ films was in good agreement with that of the single crystal, which corresponds to metallic behavior, while that of sputter-SrRuO₃ films showed semiconductor-like behavior below 120 K.

収録刊行物

• Japanese Journal of Applied Physics

  Japanese Journal of Applied Physics 41 (8), 5376-5380, 2002

  The Japan Society of Applied Physics

キーワード

• SrRuO<FONT SIZE="-1"><SUB>3</SUB></FONT>
• electrode
• crystal structure
• MOCVD
• sputtering

詳細情報

• CRID: 1390282681231500672
• NII論文ID: 210000051928
• NII論文ID: 110006341739
• NII論文ID: 130004530025
• NII書誌ID: AA10457675
• DOI: 10.1143/jjap.41.5376
• ISSN: 13474065
• ISSN: 00214922
• ISSN: http://id.crossref.org/issn/13474065
• NDL書誌ID: 6268396
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I6268396
• Web Site: http://stacks.iop.org/1347-4065/41/i=8R/a=5376/pdf
• 本文言語コード: en
• データソース種別:
  • JaLC
  • NDL
  • Crossref
  • CiNii Articles
• 抄録ライセンスフラグ: 使用不可