Field Effect of Photoluminescence from Excitons Bound to Nitrogen Atom Pairs in GaAs.
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- Onomitsu Koji
- Department of Electrical, Electronics and Computer Engineering, School of Science and Engineering, Waseda University, 3-4-1 Okubo, Shinjuku-ku, Tokyo 169-8555, Japan Kagami Memorial Laboratory for Material Science and Technologies, Waseda University, 2-8-26 Nishiwaseda, Shinjuku-ku, Tokyo 169-0051, Japan
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- Kawaharazuka Atsushi
- Department of Electrical, Electronics and Computer Engineering, School of Science and Engineering, Waseda University, 3-4-1 Okubo, Shinjuku-ku, Tokyo 169-8555, Japan Kagami Memorial Laboratory for Material Science and Technologies, Waseda University, 2-8-26 Nishiwaseda, Shinjuku-ku, Tokyo 169-0051, Japan
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- Okabe Takehito
- Department of Electrical, Electronics and Computer Engineering, School of Science and Engineering, Waseda University, 3-4-1 Okubo, Shinjuku-ku, Tokyo 169-8555, Japan Kagami Memorial Laboratory for Material Science and Technologies, Waseda University, 2-8-26 Nishiwaseda, Shinjuku-ku, Tokyo 169-0051, Japan
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- Makimoto Toshiki
- NTT Basic Research Laboratories, Atsugi, Kanagawa, 243-0124, Japan
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- Saito Hisao
- NTT Basic Research Laboratories, Atsugi, Kanagawa, 243-0124, Japan
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- Horikoshi Yoshiji
- Department of Electrical, Electronics and Computer Engineering, School of Science and Engineering, Waseda University, 3-4-1 Okubo, Shinjuku-ku, Tokyo 169-8555, Japan Kagami Memorial Laboratory for Material Science and Technologies, Waseda University, 2-8-26 Nishiwaseda, Shinjuku-ku, Tokyo 169-0051, Japan
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抄録
Field effect of photoluminescence due to excitons bound to nitrogen atom pairs in GaAs has been investigated for uniformly doped and atomic-layer-doped samples grown on (001) GaAs substrates. The intensities of excitonic photoluminescence lines due to distant nitrogen atom pairs decrease much more rapidly than those from closer pairs when the electric field is increased. In addition, photoluminescence due to the nearest neighbor pairs in atomic-layer-doped samples exhibits much more stable characteristics than that of uniformly doped samples against an applied electric field. This stability is observed only when the electric field is applied in either the [110] or [¯110] direction. This anomalous field effect can be explained by considering the electron trapping process to the isoelectric N traps modulated by the electric field.
収録刊行物
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- Japanese Journal of Applied Physics
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Japanese Journal of Applied Physics 41 (9), 5503-5506, 2002
The Japan Society of Applied Physics
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詳細情報 詳細情報について
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- CRID
- 1390001206254958592
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- NII論文ID
- 210000051956
- 110006341764
- 30021837555
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- NII書誌ID
- AA10457675
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- ISSN
- 13474065
- 00214922
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- NDL書誌ID
- 6305503
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- 本文言語コード
- en
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- データソース種別
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- JaLC
- NDL
- Crossref
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- 抄録ライセンスフラグ
- 使用不可